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Unified Quantum and Reliability Model for Ultra-Thin Double-Gate MOSFETs
Y. ElKashlan Rana, Samy Omnia, Anis Azza, Ismail Yehea,
Published in Springer Science and Business Media LLC
2020
Volume: 12
   
Issue: 1
Pages: 21 - 28
Abstract
This paper presents a unified two-dimensional (2D) threshold voltage model for lightly doped symmetrical double-gate p-channel MOSFETs including quantum confinement effects and negative bias temperature instability (NBTI). The proposed model has been derived by solving the two-dimensional Poisson equation to obtain the NBTI potential model and the one-dimensional Schrödinger equation together with the 2D Poisson equation to obtain the quantum confinement model. The quantum expression was subsequently embedded in the NBTI solution to reach a unified model for both quantum confinement and NBTI. The model is simple and continuous, thereby ensuring compatibility for insertion in Verilog-A based device simulators. The effect of stress time on the degradation of the threshold voltage has been measured over a 10 year period. The accuracy of the model has been validated through comparisons with both 2D numerical simulations and experimental data. The results show matching within ±3% for channel lengths down to 7 nm and silicon thicknesses of 5 nm at 1 GHz operation after 10 years. © 2019, Springer Nature B.V.
About the journal
JournalData powered by TypesetSilicon
PublisherData powered by TypesetSpringer Science and Business Media LLC
ISSN1876990X
Open AccessNo