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Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET
, Iñiguez B., Jiménez D., Roig J., Pallarès J., Marsal L.F.
Published in
2006
Volume: 50
   
Issue: 5
Pages: 805 - 812
Abstract
Analytical, physically-based, models for the threshold voltage and the subthreshold swing of undoped cylindrical gate all around (GAA) MOSFETs have been derived at low drain-source voltage based on an analytical solution of the two-dimensional (2-D) Poisson equation (in cylindrical coordinates) with the mobile charge term included. The new model has been verified by comparison with 3-D numerical simulations of devices with different channel lengths and thickness; the observed agreement with the numerical simulations is quite good. © 2006 Elsevier Ltd. All rights reserved.
About the journal
JournalSolid-State Electronics
ISSN00381101
Open AccessNo