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Two-dimensional analytical threshold voltage and subthreshold swing models of undoped symmetric double-gate MOSFETs
, Roig Guitart J., Iñíguez B.
Published in
Volume: 54
Issue: 6
Pages: 1402 - 1408
We have developed analytical physically based models for the threshold voltage [including the drain-induced barrier lowering (DIBL) effect] and the subthreshold swing of undoped symmetrical double-gate (DG) MOSFETs. The models are derived from an analytical solution of the 2-D Poisson equation in which the electron concentration was included. The models for DIBL, subthreshold swing, and threshold voltage roll-off have been verified by comparison with 2-D numerical simulations for different values of channel length, channel thickness, and drain-source voltage; very good agreement with the numerical simulations has been observed. © 2007 IEEE.
About the journal
JournalIEEE Transactions on Electron Devices
Open AccessNo