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Three-dimensional (3-D) analytical modeling of the threshold voltage, DIBL and subthreshold swing of cylindrical Gate All Around MOSFETs
, Iñiguez B., Roig J.
Published in Springer
Pages: 363 - 368
We present 3-D analytical, scalable models for the threshold voltage roll-off, the subthreshold swing and the DIBL of undoped cylindrical Gate All Around (GAA) MOSFETs. The models are based on an analytical solution of the 3-D Poisson equation. Device geometry dependences are inherent to the models. Excellent agreement has been obtained with 3-D numerical simulations and experimental results. © 2007 Springer.
About the journal
JournalData powered by TypesetNATO Security through Science Series B: Physics and Biophysics
PublisherData powered by TypesetSpringer
Open AccessNo