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The Impact of Temperature on the Performance of Semiconductor Laser Diode

Ahed H. Zyoud
Published in Science and Engineering Research Support Society
Volume: 29

Issue: 6
Pages: 1167 - 1180
Abstract

The features of a semiconductor laser diode (LD) are extremely dependent on the temperature of its chip. The effect of temperature on the performance of uncooled semiconductor LD was experimentally studied. These results investigated the effect of temperature on several essential parameters in order to define the quality of received output signal, such as threshold current, slope efficiency, bias barrier voltage, output power and the form of the pulse. This is essential for the selection of the best ideal LD in order to use for medical ophthalmologic diagnosis. We have found that the temperature change is led to change in the modes of LD through an external thermal noise. In this case, the performance of the LD will change as the operating temperature increases. Firstly, the results showed that as the temperature increases due to the current injection through the semiconductor laser between 12.5-22.5$°$C, a change in the threshold current, and slope efficiency are obtained by (11.4-11.8 mA) and (189-188 mW) respectively. Secondly, this increase in temperature has led to an increase in the algorithmic threshold current and barrier voltage at rate 0.0065 / $°$C and 3.0 mV/oC respectively. Finally, while the Full Width Half Maximum (FWHM) and the Peak Channel Number shift (PCN) are increased by a rate of 0.65 Ch. No/ $°$C and 0.208 Ch. No/ $°$C respectively, the peak of pulse is dropped by a rate of 24.96 au/$°$C