A precise two-dimensional MOS magnetic sensor is suggested and its performance is investigated. The dependence of sensor sensitivity on the device geometric parameters and on the biasing conditions is accurately determined by a twodimensional physical simulator which self-consistently solves the magnetic field equations and the carrier transport equations. From the simulation results, a modified equivalent circuit model for MOS magnetic sensor is proposed and included in SPICE model to fully analyze the operation of suggested magnetic field sensor. © 2009 SPIE.

Ossama A. Abo-Elnor

Ajman University

E.Y. Mohamed

M.M. Ibrahim

Magnetic sensors

Magnetism

Field effect transistors

Molybdenum

Device simulation

Sensors

Instrument modeling

Magnetic semiconductors

Semiconductors

Circuit switching

MAGFET

Physical simulators

SPICE modeling

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The 2020 QS World University Rankings lists AU in the top 800 universities globally and among the top 10 worldwide for international students and faculty! The &ldquo;Top 50 Under 50&rdquo; QS Rankings names AU as one of the top 150 young universities in the world. Even our distinct location in the Dubai/Sharjah/Ajman corridor is ranked by QS as the 61st best student destination on the planet. Recently, Ajman University earned Five QS Stars in three ratings categories -- Social Responsibility, Inclusiveness and Learning Environment. We also garnered Four QS Stars for both Teaching and Internationalization.

Proceedings of SPIE - The International Society for Optical Engineering

D.C. and A. C. characteristics of a magnetic sensor, based on Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure, have been investigated using an efficient two-dimensional physical simulator. With the coupling scheme between the magnetic field equation and the carrier transport equations in the present simulator, the effects of the device geometric parameters, the bias conditions, and the magnetic field on the current deflection due to magnetic field and on the magnetic sensor relative sensitivity are accurately determined. The MOSFET magnetic sensor capability is further enhanced by using an integrated smart structure which is able to fully detect the magnetic field variations in two-directions. The current deflection and relative sensitivity for the smart two-directions magnetic sensor under different operating conditions are finally investigated with the present efficient physical simulator.

Modeling and characterization of a smart two-directions MOSFET magnetic sensor

IEEE Sensors Journal

Low-power 2-D fully integrated CMOS fluxgate magnetometer

IEE Proceedings - Circuits, Devices and Systems

Error correction of transformed rectangular model of concave and convex MAGFETs with AC bias

IEEE Transactions on Electron Devices

Analysis of Split-Drain MAGFETs

Hall effect magnetic sensors based on polysilicon TFTs

SPICE modeling of a precise two-dimensional MOS magnetic sensor

Journal	Data powered by TypesetProceedings of SPIE - The International Society for Optical Engineering
Publisher	Data powered by TypesetSPIE, the international society for optics and photonics
ISSN	0277786X
Open Access	No