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Silicon-nanocrystal-based multiple-tunnel junction devices obtained by a combination of V-groove and ion beam synthesis techniques
Normand P., Kapetanakis E., Tsoukalas D., Tserepi A., Tsoi E., Beltsios K., , Zhang S., Van Den Berg J.
Published in Elsevier
2001
Volume: 57-58
   
Pages: 1003 - 1007
Abstract
Silicon-nanocrystal-based multiple-tunnel junction devices with non-linear source-drain current-voltage characteristics and with a source-drain electrode separation ranging from 50 to 200 nm were constructed. A combination of anisotropic wet and dry etching, optical lithography and low-energy Si ion implantation was used for their construction. Electrical characteristics were found to be strongly dependent on the source-drain separation and Si implantation dose.
About the journal
JournalData powered by TypesetMicroelectronic Engineering
PublisherData powered by TypesetElsevier
ISSN01679317
Open AccessNo