In the present work, a rigorous two-dimensional physical simulator is developed to characterize the operation and to optimize the structure of a highly sensitive linear 2D MOSFET magnetic sensor. The magnetic field equation and the carrier transport equations are efficiently coupled and accurately solved to determine the effects of external applied magnetic field on the electrical characteristics of the MOSFET based sensor. The accuracy of the present simulator is tested for different device and circuit parameters to allow the use of it as an efficient CAD tool to fully characterize smart two-directions MOSFET magnetic sensor.

Ossama A. Abo-Elnor

Ajman University

E.Y. Mohamed

M.M. Ibrahim

Magnetism

Magnetic sensors

Field effect transistors

Sensors

Instrument modeling

Molybdenum

Picosecond phenomena

Computer aided design

Solid modeling

Sensor performance

2D physical simulators

Geometrical correction factor

MOSFET magnetic sensors

Transient simulation

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Proceedings of SPIE - The International Society for Optical Engineering

D.C. and A. C. characteristics of a magnetic sensor, based on Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure, have been investigated using an efficient two-dimensional physical simulator. With the coupling scheme between the magnetic field equation and the carrier transport equations in the present simulator, the effects of the device geometric parameters, the bias conditions, and the magnetic field on the current deflection due to magnetic field and on the magnetic sensor relative sensitivity are accurately determined. The MOSFET magnetic sensor capability is further enhanced by using an integrated smart structure which is able to fully detect the magnetic field variations in two-directions. The current deflection and relative sensitivity for the smart two-directions magnetic sensor under different operating conditions are finally investigated with the present efficient physical simulator.

Modeling and characterization of a smart two-directions MOSFET magnetic sensor

IEEE Sensors Journal

Low-power 2-D fully integrated CMOS fluxgate magnetometer

IEE Proceedings - Circuits, Devices and Systems

Error correction of transformed rectangular model of concave and convex MAGFETs with AC bias

IEEE Transactions on Electron Devices

Analysis of Split-Drain MAGFETs

Hall effect magnetic sensors based on polysilicon TFTs

Physical modeling of a highly sensitive linear MOS sensor for 2D detection of magnetic fields

Journal	Data powered by TypesetProceedings of SPIE - The International Society for Optical Engineering
Publisher	Data powered by TypesetSPIE, the international society for optics and photonics
ISSN	0277786X
Open Access	No