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Physical modeling of a highly sensitive linear MOS sensor for 2D detection of magnetic fields
, E.Y. Mohamed, M.M. Ibrahim
Published in SPIE, the international society for optics and photonics
2007
Volume: 6589
   
Abstract
In the present work, a rigorous two-dimensional physical simulator is developed to characterize the operation and to optimize the structure of a highly sensitive linear 2D MOSFET magnetic sensor. The magnetic field equation and the carrier transport equations are efficiently coupled and accurately solved to determine the effects of external applied magnetic field on the electrical characteristics of the MOSFET based sensor. The accuracy of the present simulator is tested for different device and circuit parameters to allow the use of it as an efficient CAD tool to fully characterize smart two-directions MOSFET magnetic sensor.
About the journal
JournalData powered by TypesetProceedings of SPIE - The International Society for Optical Engineering
PublisherData powered by TypesetSPIE, the international society for optics and photonics
ISSN0277786X
Open AccessNo
Concepts (14)
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    Magnetism
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    Magnetic sensors
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    Field effect transistors
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    Sensors
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    Instrument modeling
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    Molybdenum
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    Picosecond phenomena
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    Computer aided design
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    Solid modeling
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    Sensor performance
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    2d physical simulators
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    Geometrical correction factor
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    Mosfet magnetic sensors
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    Transient simulation