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Performance evaluation of finFET based SRAM under statistical VT variability
Published in Institute of Electrical and Electronics Engineers Inc.
2014
Volume: 2015-March
   
Pages: 88 - 91
Abstract
FinFET devices are the most promising solutions for further technology scaling in the long term projections of the ITRS. The performance of extremely scaled FinFET-based 256-bit (6T) SRAM is evaluated with technology scaling for channel lengths of 20nm down to 7nm showing the scaling trends of basic performance metrics. In addition, the impact of threshold voltage variations on the delay, power, and stability is reported considering die-to-die variations. Significant performance degradation is found starting from the 10nm channel length and continues down to 7nm. © 2014 IEEE.
About the journal
JournalData powered by TypesetProceedings of the International Conference on Microelectronics, ICM
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
Open AccessNo