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New Graded Band Gap Channel MOSFET for low noise and GHz applications
H. Abdelhamed, A. El-Henawy,
Published in SPIE, the international society for optics and photonics
Volume: 4111
Pages: 373 - 381
A new Graded Band Gap Channel (GBGC) MOSFET is suggested to make use of the improved electrical properties of SiGe over Si at high frequencies of operation. The device performance is analyzed by using an analytical model and the obtained results are compared with those of conventional Si and Non-Uniform Doped Channel (NUDC) MOSFETs. Finally, the noise behavior of the new MOSFET is investigated to show its superior performance over conventional Si MOSFETs at GHz frequencies of operation.
About the journal
JournalData powered by TypesetProceedings of SPIE - The International Society for Optical Engineering
PublisherData powered by TypesetSPIE, the international society for optics and photonics
Open AccessNo
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