A new Graded Band Gap Channel (GBGC) MOSFET is suggested to make use of the improved electrical properties of SiGe over Si at high frequencies of operation. The device performance is analyzed by using an analytical model and the obtained results are compared with those of conventional Si and Non-Uniform Doped Channel (NUDC) MOSFETs. Finally, the noise behavior of the new MOSFET is investigated to show its superior performance over conventional Si MOSFETs at GHz frequencies of operation.

Ossama A. Abo-Elnor

Ajman University

H. Abdelhamed

A. El-Henawy

Field effect transistors

Silicon

Instrument modeling

Electrons Microwave radiation

Germanium

Interference (communication)

Chemical species

Semiconductors

Solids

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Proceedings of SPIE - The International Society for Optical Engineering

A novel graded band gap channel Si-SiGe MOSFET structure has been suggested and its characteristics have been investigated. The investigations indicated that the suggested structure reduces the short-channel effects, increases the cut-off frequency, and hence makes its usage at high frequency and Low noise applications possible. To show the superior performance of the suggested structure at GHz frequencies, and as an example, the noise behavior of the structure is determined. First the device noise model parameters are calculated from D.C. and A.C. characteristics. The extracted noise model parameters are then used to determine the minimum noise figure at GHz frequencies. The effects of the different device parameters on the noise performance are determined. Finally, the results are compared with those of conventional MOSFET structure to show the superior performance of graded band gap Si-SiGe MOSFETs at high frequency ranges. © World Scientific Publishing Company.

Fluctuation and Noise Letters

Modeling of noise behavior of graded band gap channel mosfet at GHz frequencies

The influence of alloy composition on the noise behavior of heterostructure semiconductor devices is investigated by using a rigorous two-dimensional physical simulator. The model takes into account non-stationary transport properties and quantization effects to allow a better understanding of the carrier transport properties inside the heterostructure devices and consequently to explain the noise performance of these devices by making use of the microscopic nature of the model. As an example, the model is applied to study the effects of alloy composition and the resulting band discontinuity on the 2DEG properties and on the noise performance of Hetero-FETs at millimeter-wave frequencies, and to extract the optimum alloy composition which leads to the minimum noise figure in different frequency ranges.

Impact of alloy composition on the noise behavior of heterostructure devices at millimeter wave frequencies

A novel graded band gap channel Si-SiGe MOSFET structure has been suggested and its characteristics has been investigated. The investigations indicated that the suggested structure reduces the short-channel effects, increases the cutoff frequency, and hence makes it usage at high frequency and Low noise applications prefeable. To show the superior performance of the suggested structure at GHz frequencies, and as an example, the noise behavior of the structure is thoroughly investigated. First the device noise model parameters are calculated from D.C. and A.C. characteristics. The extracted noise model parameters are then used to determine the minimum noise figure and minimum noise temperature at GHz frequencies. The effects of the different device parameters on the noise performance are determined. Finally, the results are compared with those of conventional MOSFET structure to show the superior performance of graded band gap Si-SiGe MOSFETs at these frequency ranges.

Modeling of noise behavior of graded band-gap channel MOSFET at GHz frequencies

Advances in Electronics and Electron Physics

Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect Transistors

26th European Microwave Conference, 1996

Influence of alloy composition on the noise behavior of hetero-FETs in millimeter-wave frequency range

1997 IEEE MTT-S International Microwave Symposium Digest

Efficient modeling of microscopic and macroscopic noise behavior of submicron-highly-doped semiconductor devices at millimeter-wave frequencies

New Graded Band Gap Channel MOSFET for low noise and GHz applications

Journal	Data powered by TypesetProceedings of SPIE - The International Society for Optical Engineering
Publisher	Data powered by TypesetSPIE, the international society for optics and photonics
ISSN	0277786X
Open Access	No