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Impact of alloy composition on the noise behavior of heterostructure devices at millimeter wave frequencies
Published in SPIE, the international society for optics and photonics
2001
Volume: 4490
   
Pages: 152 - 159
Abstract
The influence of alloy composition on the noise behavior of heterostructure semiconductor devices is investigated by using a rigorous two-dimensional physical simulator. The model takes into account non-stationary transport properties and quantization effects to allow a better understanding of the carrier transport properties inside the heterostructure devices and consequently to explain the noise performance of these devices by making use of the microscopic nature of the model. As an example, the model is applied to study the effects of alloy composition and the resulting band discontinuity on the 2DEG properties and on the noise performance of Hetero-FETs at millimeter-wave frequencies, and to extract the optimum alloy composition which leads to the minimum noise figure in different frequency ranges.
About the journal
JournalData powered by TypesetProceedings of SPIE - The International Society for Optical Engineering
PublisherData powered by TypesetSPIE, the international society for optics and photonics
ISSN0277786X
Open AccessNo
Concepts (15)
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    Aluminum
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    Instrument modeling
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    Heterojunctions
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    Performance modeling
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    Scattering
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    Solids
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    Quantization
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    Chlorine
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    Extremely high frequency
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    Semiconductors
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    Alloy composition
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    Heterostructure devices
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    Non-stationary transport
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    Physical models
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    Quantization effects