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Double gate MOSFET compact model including scattering
, Iñíguez B., Jiménez D., Marsal L.F., Pallarès J.
Published in
2005
Volume: 2005
   
Pages: 413 - 417
Abstract
This work presents a compact model, which includes scattering, for the silicon quantum well MOSFET. The model is based on the Landauer transmission theory and McKelvey's flux theory, and Is continuous from below to above threshold and from linear to saturation regions. A good agreement with 2-D numerical simulations (nanoMOS) is obtained with our compact model. The effect of backscattering on both the channel conductance and the average velocity near the source end is studied in this work. © 2005 IEEE.
About the journal
Journal2005 Spanish Conference on Electron Devices, Proceedings
Open AccessNo