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A simple model of the nanoscale double gate MOSFET based on the flux method
, Iñíguez B., Jiménez D., F. Marsal L., Pallarès J.
Published in Wiley
2005
Volume: 2
   
Issue: 8
Pages: 3086 - 3089
Abstract
We present a physics-based model for the double gate MOSFET, which incorporates the effect of the scattering along the channel. The model is based on the McKelvey's flux theory, and properly captures the transition between the different operation regions. The effect of scattering on both the channel conductance and the average velocity near the source end is examined. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
About the journal
JournalData powered by Typesetphysica status solidi
PublisherData powered by TypesetWiley
ISSN16101634
Open AccessNo