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A Novel Physical Modelling of FGMOSFET used in Circuit Simulators for Low-Power Systems and Optical Devices Applications
, Nassar A.M., , Ayoub H.S., Elbashar Y.H.
Published in Institute of Electrical and Electronics Engineers Inc.
2019
Volume: 2019-April
   
Pages: 350 - 359
Abstract
Floating-Gate MOSFET (FGMOSFET) is very popular electron device that used in many low-power circuits, opto-electronic systems and biomedical applications. A physical and compact model for FGMOSFET is highly needed to its flexibility usage. In this work, a physical modeling of the device is introduced rather than other popular models which have fitting parameters like Berkeley model (BSIM). A mathematical model for the parasitic capacitances needed for both DC and AC modeling of the device which introduced for 0.13um CMOS technology. The output and transfer characteristics were verified with the spice simulation model in Cadence, which is BSIM3v3. Also, the introduced model is a spice model for FGMOSFET and can be used in many circuit simulators. The model is based on n-channel FGMOSFET and can simply be modified to p-channel device by multiplying equations with negative one. © 2019 IEEE.
About the journal
JournalData powered by TypesetNational Radio Science Conference, NRSC, Proceedings
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
Open AccessNo