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A masking approach for anisotropic silicon wet etching
Normand P., Beltsios K., Tserepi A., , Tsoukalas D., Cardinaud C.
Published in IOP Publishing
2001
Volume: 4
   
Issue: 10
Pages: 73 - 76
Abstract
A new simple and rapid room-temperature silicon masking approach based on the exposure of silicon to CHF3-based plasma is presented. This plasma treatment leads to silicon surface modifications appropriate for masking purposes during anisotropic etching in ethylenediamine-pyrocatechol-water (EPW) solutions. The resistance of the mask to EPW etching solutions is studied as a function of plasma radio frequency power and pressure, plasma duration, silicon surface preparation, and aging. Mask resistance increases with increasing power density and decreasing pressure. Plasma duration has a significant effect on the temporal and spatial pattern of defects that evolve during etching and lead eventually to mask destruction.
About the journal
JournalData powered by TypesetElectrochemical and Solid-State Letters
PublisherData powered by TypesetIOP Publishing
ISSN10990062
Open AccessNo