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A comparative evaluation of single-walled carbon nanotubes and copper in interconnects and Through-Silicon Vias
Published in Institute of Electrical and Electronics Engineers Inc.
2016
Volume: 2016-March
   
Pages: 519 - 522
Abstract
In this paper we compare Single-walled Carbon nanotubes (SWCNT) and copper as fillers for Through-Silicon Vias (TSVs) in 3D chips and as materials for on chip interconnects. It is shown that vias and interconnects made from SWCNTs handle crosstalk better than those made from copper. The choice of SWCNT is based on their higher resilience to electromigration due to the strong sp2 bonding between the carbon atoms, which enables SWCNT wires to carry more current than a copper wire of the same dimensions. © 2015 IEEE.