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A 3-D analytical physically based model for the subthreshold swing in undoped trigate FinFETs
, Guitart J.R., Kilchytska V., Flandre D., Iñiguez B.
Published in
Volume: 54
Issue: 9
Pages: 2487 - 2496
An analytical physically based analysis for undoped FinFET devices in the subthreshold and near-threshold regimes has been developed by solving the 3-D Poisson equation, in which the mobile-charge term was included. From this analysis, a subthreshold-swing model has been developed; this model is also based on a new physically based analysis of the conduction path. The subthreshold-swing model has been verified by comparison with 3-D numerical simulations and measured values; a very good agreement with both 3-D numerical simulation and the experimental results was observed. © 2007 IEEE.
About the journal
JournalIEEE Transactions on Electron Devices
Open AccessNo