Ultra low power, harsh environment SOI-CMOS design of temperature sensor based threshold detection and wake-up IC

M. Assaad; P. Gérard; L. A. Francis; D. Flandre

doi:10.1109/SOI.2010.5641369

Ultra low power, harsh environment SOI-CMOS design of temperature sensor based threshold detection and wake-up IC

M. Assaad
, P. Gérard
, L. A. Francis
, D. Flandre

Université catholique de Louvain

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Original language	English
Title of host publication	2010 IEEE International SOI Conference, SOI 2010
DOIs	https://doi.org/10.1109/SOI.2010.5641369
State	Published - 2010
Externally published	Yes
Event	2010 IEEE International Silicon on Insulator Conference, SOI 2010 - San Diego, CA, United States Duration: 11 Oct 2010 → 14 Oct 2010

Publication series

Name	Proceedings - IEEE International SOI Conference
ISSN (Print)	1078-621X

Conference

Conference	2010 IEEE International Silicon on Insulator Conference, SOI 2010
Country/Territory	United States
City	San Diego, CA
Period	11/10/10 → 14/10/10

Access to Document

10.1109/SOI.2010.5641369

Cite this

@inproceedings{e2fcbfa06f174e27a29740c04617baba,

title = "Ultra low power, harsh environment SOI-CMOS design of temperature sensor based threshold detection and wake-up IC",

author = "M. Assaad and P. G{\'e}rard and Francis, \{L. A.\} and D. Flandre",

year = "2010",

doi = "10.1109/SOI.2010.5641369",

language = "English",

isbn = "9781424491285",

series = "Proceedings - IEEE International SOI Conference",

booktitle = "2010 IEEE International SOI Conference, SOI 2010",

note = "2010 IEEE International Silicon on Insulator Conference, SOI 2010 ; Conference date: 11-10-2010 Through 14-10-2010",

}

Assaad, M, Gérard, P, Francis, LA & Flandre, D 2010, Ultra low power, harsh environment SOI-CMOS design of temperature sensor based threshold detection and wake-up IC. in 2010 IEEE International SOI Conference, SOI 2010., 5641369, Proceedings - IEEE International SOI Conference, 2010 IEEE International Silicon on Insulator Conference, SOI 2010, San Diego, CA, United States, 11/10/10. https://doi.org/10.1109/SOI.2010.5641369

Ultra low power, harsh environment SOI-CMOS design of temperature sensor based threshold detection and wake-up IC. / Assaad, M.; Gérard, P.; Francis, L. A. et al.
2010 IEEE International SOI Conference, SOI 2010. 2010. 5641369 (Proceedings - IEEE International SOI Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ultra low power, harsh environment SOI-CMOS design of temperature sensor based threshold detection and wake-up IC

AU - Assaad, M.

AU - Gérard, P.

AU - Francis, L. A.

AU - Flandre, D.

PY - 2010

Y1 - 2010

UR - https://www.scopus.com/pages/publications/78650565100

U2 - 10.1109/SOI.2010.5641369

DO - 10.1109/SOI.2010.5641369

M3 - Conference contribution

AN - SCOPUS:78650565100

SN - 9781424491285

T3 - Proceedings - IEEE International SOI Conference

BT - 2010 IEEE International SOI Conference, SOI 2010

T2 - 2010 IEEE International Silicon on Insulator Conference, SOI 2010

Y2 - 11 October 2010 through 14 October 2010

ER -

Ultra low power, harsh environment SOI-CMOS design of temperature sensor based threshold detection and wake-up IC

Publication series

Conference

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