Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET

Hamdy Abd-Elhamid; Benjamin Iñiguez; David Jiménez; Jaume Roig; Josep Pallarès; Lluís F. Marsal

doi:10.1016/j.sse.2006.04.020

Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET

Hamdy Abd-Elhamid
, Benjamin Iñiguez
, David Jiménez
, Jaume Roig
, Josep Pallarès
, Lluís F. Marsal

Universidad Rovira i Virgili
Polytechnic University of Catalonia
LAAS / CNRS

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

Analytical, physically-based, models for the threshold voltage and the subthreshold swing of undoped cylindrical gate all around (GAA) MOSFETs have been derived at low drain-source voltage based on an analytical solution of the two-dimensional (2-D) Poisson equation (in cylindrical coordinates) with the mobile charge term included. The new model has been verified by comparison with 3-D numerical simulations of devices with different channel lengths and thickness; the observed agreement with the numerical simulations is quite good.

Original language	English
Pages (from-to)	805-812
Number of pages	8
Journal	Solid-State Electronics
Volume	50
Issue number	5
DOIs	https://doi.org/10.1016/j.sse.2006.04.020
State	Published - May 2006
Externally published	Yes

Keywords

Device modeling
Downscaling
Gate all around
MOSFET
Subthreshold swing
Surrounding-gate MOSFET
Threshold voltage

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10.1016/j.sse.2006.04.020

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title = "Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET",

abstract = "Analytical, physically-based, models for the threshold voltage and the subthreshold swing of undoped cylindrical gate all around (GAA) MOSFETs have been derived at low drain-source voltage based on an analytical solution of the two-dimensional (2-D) Poisson equation (in cylindrical coordinates) with the mobile charge term included. The new model has been verified by comparison with 3-D numerical simulations of devices with different channel lengths and thickness; the observed agreement with the numerical simulations is quite good.",

keywords = "Device modeling, Downscaling, Gate all around, MOSFET, Subthreshold swing, Surrounding-gate MOSFET, Threshold voltage",

author = "Hamdy Abd-Elhamid and Benjamin I{\~n}iguez and David Jim{\'e}nez and Jaume Roig and Josep Pallar{\`e}s and Marsal, \{Llu{\'i}s F.\}",

year = "2006",

month = may,

doi = "10.1016/j.sse.2006.04.020",

language = "English",

volume = "50",

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journal = "Solid-State Electronics",

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T1 - Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET

AU - Abd-Elhamid, Hamdy

AU - Iñiguez, Benjamin

AU - Jiménez, David

AU - Roig, Jaume

AU - Pallarès, Josep

AU - Marsal, Lluís F.

PY - 2006/5

Y1 - 2006/5

N2 - Analytical, physically-based, models for the threshold voltage and the subthreshold swing of undoped cylindrical gate all around (GAA) MOSFETs have been derived at low drain-source voltage based on an analytical solution of the two-dimensional (2-D) Poisson equation (in cylindrical coordinates) with the mobile charge term included. The new model has been verified by comparison with 3-D numerical simulations of devices with different channel lengths and thickness; the observed agreement with the numerical simulations is quite good.

AB - Analytical, physically-based, models for the threshold voltage and the subthreshold swing of undoped cylindrical gate all around (GAA) MOSFETs have been derived at low drain-source voltage based on an analytical solution of the two-dimensional (2-D) Poisson equation (in cylindrical coordinates) with the mobile charge term included. The new model has been verified by comparison with 3-D numerical simulations of devices with different channel lengths and thickness; the observed agreement with the numerical simulations is quite good.

KW - Device modeling

KW - Downscaling

KW - Gate all around

KW - MOSFET

KW - Subthreshold swing

KW - Surrounding-gate MOSFET

KW - Threshold voltage

UR - https://www.scopus.com/pages/publications/33744925387

U2 - 10.1016/j.sse.2006.04.020

DO - 10.1016/j.sse.2006.04.020

M3 - Article

AN - SCOPUS:33744925387

SN - 0038-1101

VL - 50

SP - 805

EP - 812

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 5

ER -

Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET

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Keywords

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