Abstract
We have developed analytical physically based models for the threshold voltage [including the drain-induced barrier lowering (DIBL) effect] and the subthreshold swing of undoped symmetrical double-gate (DG) MOSFETs. The models are derived from an analytical solution of the 2-D Poisson equation in which the electron concentration was included. The models for DIBL, subthreshold swing, and threshold voltage roll-off have been verified by comparison with 2-D numerical simulations for different values of channel length, channel thickness, and drain-source voltage; very good agreement with the numerical simulations has been observed.
| Original language | English |
|---|---|
| Pages (from-to) | 1402-1408 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 54 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jun 2007 |
| Externally published | Yes |
Keywords
- Device modeling
- Double gate (DG)
- Downscaling
- Drain induced barrier lowering (DIBL)
- MOSFET
- Subthreshold swing
- Threshold voltage
Fingerprint
Dive into the research topics of 'Two-dimensional analytical threshold voltage and subthreshold swing models of undoped symmetric double-gate MOSFETs'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver