@inproceedings{bbd733fd0bf74ac792c4de4e872e30cd,
title = "Three-dimensional (3-D) analytical modeling of the threshold voltage, DIBL and subthreshold swing of cylindrical Gate All Around MOSFETs",
abstract = "We present 3-D analytical, scalable models for the threshold voltage roll-off, the subthreshold swing and the DIBL of undoped cylindrical Gate All Around (GAA) MOSFETs. The models are based on an analytical solution of the 3-D Poisson equation. Device geometry dependences are inherent to the models. Excellent agreement has been obtained with 3-D numerical simulations and experimental results.",
keywords = "3-D modeling, Gate All Around MOSFET, Scalability, Short-channel effects",
author = "\{El Hamid\}, \{H. A.\} and B. I{\~n}iguez and Jaume Roig",
year = "2006",
language = "English",
isbn = "9781402063787",
series = "NATO Security through Science Series B: Physics and Biophysics",
pages = "363--368",
booktitle = "Nanoscaled Semiconductor-on-Insulator Structures and Devices",
}