Abstract
The characteristics of a semiconductor laser diode (LD) are highly dependent on the magnetic field that applied on it. This study is valuable in several fields, including the existence of a magnetic field especially in a narrow region, which is difficult to detect by traditional techniques. This will lead to manufacture a micro-sensor to measure a weak magnetic field. In this study, we have investigated the influence of magnetic field, with an amplitude of (zero-0.55 T) on dynamical characteristics of semiconductor laser diode. This magnetic field has applied parallel and perpendicular on the axis of the active region of the laser diode (LD) chip. The LD used in this study is (Sanyo DL3149-056. ALGanP Index Guided Multiple Quantum will active laser and had threshold current of 11.15 mA and slope efficiency of 189.4 mW/A). It has been found that the full width half-maximum (FWHN), and the peak channel number (PCN) shift, were all increasing with the increased of magnetic field. Finally, the results show that while the peak of the pulse (light intensity) reduces with the increasing of magnetic field, the appearance of more than one peak (abnormalities) on the laser pulse has been founded clearly.
| Original language | English |
|---|---|
| Pages (from-to) | 323-328 |
| Number of pages | 6 |
| Journal | Universal Journal of Electrical and Electronic Engineering |
| Volume | 6 |
| Issue number | 5 |
| DOIs | |
| State | Published - 2019 |
Keywords
- Active layer
- Full width half-maximum
- Magnetic field
- Peak channel number shift
- Semiconductor laser
- Threshold current
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