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The impact of FinFET technology scaling on critical path performance under process variations

  • Siemens
  • Cairo University
  • Zewail City of Science and Technology

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Comparisons of FinFET based ring oscillator (RO) metrics are evaluated with technology scaling from 20nm to 7nm technology. Simulations are based on predictive technology models (PTM) developed by Arizona state university. The impact of process and temperature variations on frequency, power, and power delay product is reported. Performance and power of the RO are improved with technology scaling, however performance is degraded after 14nm technology.

Original languageEnglish
Title of host publication5th International Conference on Energy Aware Computing Systems and Applications, ICEAC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479917716
DOIs
StatePublished - 9 Dec 2015
Externally publishedYes
Event5th International Conference on Energy Aware Computing Systems and Applications, ICEAC 2015 - Cairo, Egypt
Duration: 24 Mar 201526 Mar 2015

Publication series

Name5th International Conference on Energy Aware Computing Systems and Applications, ICEAC 2015

Conference

Conference5th International Conference on Energy Aware Computing Systems and Applications, ICEAC 2015
Country/TerritoryEgypt
CityCairo
Period24/03/1526/03/15

Keywords

  • Nano-scale FinFET
  • Process variations
  • Ring Oscillator

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