@inproceedings{f2f08479caa54f65be61be34b04c9e85,
title = "The impact of baseband electrical memory effects on the dynamic transfer characteristics of microwave power transistors",
abstract = "The inter-modulation distortion products can vary both in terms of amplitude and asymmetry due to the effects of baseband and 2nd harmonic impedance. This paper presents an investigation into the relationship between the IMD asymmetries caused by baseband impedance variation and the looping or hysteresis that can sometimes appear in the dynamic transfer characteristics of microwave power devices when subjected to modulated excitation. The investigation is carried out using a 2W GaN HFET bare die device characterized at 2.1GHz, and using IF active load-pull to clarify the role of baseband impedance on observed hysteresis in the dynamic transfer characteristics. Analysis is performed using the envelope domain in order to more effectively reveal the DUT's sensitivity to impedance environments and specifically electrical baseband memory effects.",
keywords = "Envelope domain, GaN, Hysteresis, IF active load-pull, Inter-modulation, Memory effects",
author = "M. Akmal and J. Lees and S. Bensmida and S. Woodington and J. Benedikt and K. Morris and M. Beach and J. McGeehan and Tasker, \{P. J.\}",
year = "2010",
doi = "10.1109/INMMIC.2010.5480111",
language = "English",
isbn = "9781424474127",
series = "2010 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2010 - Conference Proceedings",
pages = "148--151",
booktitle = "2010 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2010 - Conference Proceedings",
note = "2010 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2010 ; Conference date: 26-04-2010 Through 27-04-2010",
}