Synthesis and characterization g-C₃N₄-doped PMMA polymeric nanocomposites films for electronic and optoelectronic applications

Solution casting was used to synthesis polymethyl methacrylate (PMMA) nanocomposites with graphitic carbon nitride (g-C₃N₄) nanoparticles in various percentages (0.033, 0.166, 0.33, 1.665, and 3.3 wt%). XRD patterns confirmed the amorphous nature of PMMA/C₃N₄ nanocomposites. Optical constants are obtained at room temperature in the 200–2500 nm wavelength range. The optical band gaps of PMMA/C₃N₄ doped films, both direct and indirect, are measured and have values change from 4.8 to 2.32 eV for (Formula presented.) and changes from 5 to 3.7 eV for (Formula presented.). The refractive index values of the materials were also calculated using Moss, Reddy, Anani, and Kumar-Singh relationships with average values vary from (2.109 to 2.529) and vary from 2.155 to 2.32 for indirect and direct transition, respectively. The dielectric constant, dielectric loss, and AC electrical conductivity at RT and the g-C₃N₄ doping level was examined as frequency variables from 100 to 1 MHz. In consideration of Jonscher's universal power law, the variation of σ_AC with frequency was examined. The addition of C₃N₄ appears to raise the σ_AC of the studied films, making them attractive for semiconductor applications. According to the optical limiting results, the samples doped with g-C₃N₄ are severely attenuated for the laser beam of 638.2 nm. PMMA doped with g-C₃N₄ is a viable contender for electronic and optoelectronic applications, particularly laser power reduction.