Study and characterization of a new MOSFET voltage controlled negative resistance for super selective IC tank circuits

Adel El-Hennawy; Kamel Hassan; Ashraf Ramadan Abou El-Ela; Hamdy Abd El-Hameed

Study and characterization of a new MOSFET voltage controlled negative resistance for super selective IC tank circuits

Adel El-Hennawy
, Kamel Hassan
, Ashraf Ramadan Abou El-Ela
, Hamdy Abd El-Hameed

Ain Shams University

Research output: Contribution to conference › Paper › peer-review

Abstract

MOSFET transistors may be fabricated with a variety of gate geometries. The trapezoidal shape provides new interesting one. If this nonstandard geometry is made dependent on the biasing condition original behavior and new I - V characteristics are expected to be obtained. This paper presents a study and characterization of this new device and shows that it provides a voltage controlled negative resistance. It is seen to have many noticeable advantages over those devices which have been already known. This new negative resistance find a wide areas of applications in communications, measurements and instrumentation. It can be used to build up a super selective tank circuits which can be entirely integrated using MOSFET technology.

Original language	English
Pages	D1
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 15th National Radio Science Conference (NRSC '98) - Cairo, Egypt Duration: 24 Feb 1998 → 26 Feb 1998

Conference

Conference	Proceedings of the 1998 15th National Radio Science Conference (NRSC '98)
City	Cairo, Egypt
Period	24/02/98 → 26/02/98

Cite this

@conference{1e696f1bcb64462a9e1a8cb1c56c36d7,

title = "Study and characterization of a new MOSFET voltage controlled negative resistance for super selective IC tank circuits",

abstract = "MOSFET transistors may be fabricated with a variety of gate geometries. The trapezoidal shape provides new interesting one. If this nonstandard geometry is made dependent on the biasing condition original behavior and new I - V characteristics are expected to be obtained. This paper presents a study and characterization of this new device and shows that it provides a voltage controlled negative resistance. It is seen to have many noticeable advantages over those devices which have been already known. This new negative resistance find a wide areas of applications in communications, measurements and instrumentation. It can be used to build up a super selective tank circuits which can be entirely integrated using MOSFET technology.",

author = "Adel El-Hennawy and Kamel Hassan and \{Abou El-Ela\}, \{Ashraf Ramadan\} and \{Abd El-Hameed\}, Hamdy",

year = "1998",

language = "English",

pages = "D1",

note = "Proceedings of the 1998 15th National Radio Science Conference (NRSC '98) ; Conference date: 24-02-1998 Through 26-02-1998",

}

Study and characterization of a new MOSFET voltage controlled negative resistance for super selective IC tank circuits. / El-Hennawy, Adel; Hassan, Kamel; Abou El-Ela, Ashraf Ramadan et al.
1998. D1 Paper presented at Proceedings of the 1998 15th National Radio Science Conference (NRSC '98), Cairo, Egypt.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Study and characterization of a new MOSFET voltage controlled negative resistance for super selective IC tank circuits

AU - El-Hennawy, Adel

AU - Hassan, Kamel

AU - Abou El-Ela, Ashraf Ramadan

AU - Abd El-Hameed, Hamdy

PY - 1998

Y1 - 1998

N2 - MOSFET transistors may be fabricated with a variety of gate geometries. The trapezoidal shape provides new interesting one. If this nonstandard geometry is made dependent on the biasing condition original behavior and new I - V characteristics are expected to be obtained. This paper presents a study and characterization of this new device and shows that it provides a voltage controlled negative resistance. It is seen to have many noticeable advantages over those devices which have been already known. This new negative resistance find a wide areas of applications in communications, measurements and instrumentation. It can be used to build up a super selective tank circuits which can be entirely integrated using MOSFET technology.

AB - MOSFET transistors may be fabricated with a variety of gate geometries. The trapezoidal shape provides new interesting one. If this nonstandard geometry is made dependent on the biasing condition original behavior and new I - V characteristics are expected to be obtained. This paper presents a study and characterization of this new device and shows that it provides a voltage controlled negative resistance. It is seen to have many noticeable advantages over those devices which have been already known. This new negative resistance find a wide areas of applications in communications, measurements and instrumentation. It can be used to build up a super selective tank circuits which can be entirely integrated using MOSFET technology.

UR - https://www.scopus.com/pages/publications/0032272872

M3 - Paper

AN - SCOPUS:0032272872

SP - D1

T2 - Proceedings of the 1998 15th National Radio Science Conference (NRSC '98)

Y2 - 24 February 1998 through 26 February 1998

ER -

Study and characterization of a new MOSFET voltage controlled negative resistance for super selective IC tank circuits

Abstract

Conference

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