Structural, electronic, and optoelectronic characteristics of GaClPc/n-Si heterojunction for photodiode device

Phthalocyanines are promising materials that have unique electronic and optoelectronic properties. Therefore, the fabrication of phthalocyanines doped by Gallium chloride GaClPc/n-Si heterojunction (HJ) has been done. The internal structural properties of GaClPc have been carried out using scan electron microscopy and X-rays diffraction, where it was found that the film has a nanostructure with an average particle size of 150 ± 45 nm. The capacitance-voltage of GaClPc/n-Si HJ was investigated, where the carrier concentration and built-in voltage were calculated as 6.74 × 1021 cm⁻³ and 0.91 V, respectively. The I–V characteristics of our investigated diode have been examined using Shockley equations. The electronic characteristics of GaClPc/n-Si HJ were studied in dark conditions and under different illumination intensities up to 100 mW/cm². The obtained values of series and shunt resistances under dark conditions are 4.5 × 10⁴ and 4.1 × 10⁶ Ω, respectively. The photosensitivity of GaClPc/n-Si HJ increased up to 11.41 × 10⁴ as the illumination intensity reached 100 mW/cm². These results candidate the fabricated GaClPc/n-Si HJ for potential applications in photodiode devices.