Structural, electrical and photovoltaic properties of PbSb2S5/n-Si heterojunction synthesized by vacuum coating technique

A. M. Mansour; I. S. Yahia; I. M.El Radaf

doi:10.1088/2053-1591/aad15b

Structural, electrical and photovoltaic properties of PbSb₂S₅/n-Si heterojunction synthesized by vacuum coating technique

A. M. Mansour
, I. S. Yahia
, I. M.El Radaf

National Research Center
King Khalid University
Ain Shams University

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

lead antimony sulfide (PbSb₂S₅) thin films were successfully grown on an n-Si substrate by a thermal evaporation technique. The XRD spectrum clarifies the orthorhombic structure of the prepared PbSb₂S₅ thin films and the EDX analysis specifies that its composition is near stoichiometric. In the dark conditions, I-V characteristics of the PbSb₂S₅/n-Si heterojunction were utilized to determine the barrier height (f_b), diode ideality factor (n), and both series and shunt resistances. The C-V characteristic analysis shows that the prepared PbSb₂S₅/n-Si heterojunction is an abrupt junction. The power conversion efficiency of the prepared heterojunction has been calculated from the J-V characteristics under illuminations and was found to be 3.72%.

Original language	English
Article number	076406
Journal	Materials Research Express
Volume	5
Issue number	7
DOIs	https://doi.org/10.1088/2053-1591/aad15b
State	Published - Jul 2018
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Heterojunction
Lead antimony sulfide
Photovoltaic
Thermal evaporation technique
XRD

Access to Document

10.1088/2053-1591/aad15b

Cite this

@article{9713227801b8448e92cb6f413d3dbf3f,

title = "Structural, electrical and photovoltaic properties of PbSb2S5/n-Si heterojunction synthesized by vacuum coating technique",

abstract = "lead antimony sulfide (PbSb2S5) thin films were successfully grown on an n-Si substrate by a thermal evaporation technique. The XRD spectrum clarifies the orthorhombic structure of the prepared PbSb2S5 thin films and the EDX analysis specifies that its composition is near stoichiometric. In the dark conditions, I-V characteristics of the PbSb2S5/n-Si heterojunction were utilized to determine the barrier height (fb), diode ideality factor (n), and both series and shunt resistances. The C-V characteristic analysis shows that the prepared PbSb2S5/n-Si heterojunction is an abrupt junction. The power conversion efficiency of the prepared heterojunction has been calculated from the J-V characteristics under illuminations and was found to be 3.72\%.",

keywords = "Heterojunction, Lead antimony sulfide, Photovoltaic, Thermal evaporation technique, XRD",

author = "Mansour, \{A. M.\} and Yahia, \{I. S.\} and Radaf, \{I. M.El\}",

note = "Publisher Copyright: {\textcopyright} 2018 IOP Publishing Ltd",

year = "2018",

month = jul,

doi = "10.1088/2053-1591/aad15b",

language = "English",

volume = "5",

journal = "Materials Research Express",

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TY - JOUR

T1 - Structural, electrical and photovoltaic properties of PbSb2S5/n-Si heterojunction synthesized by vacuum coating technique

AU - Mansour, A. M.

AU - Yahia, I. S.

AU - Radaf, I. M.El

PY - 2018/7

Y1 - 2018/7

N2 - lead antimony sulfide (PbSb2S5) thin films were successfully grown on an n-Si substrate by a thermal evaporation technique. The XRD spectrum clarifies the orthorhombic structure of the prepared PbSb2S5 thin films and the EDX analysis specifies that its composition is near stoichiometric. In the dark conditions, I-V characteristics of the PbSb2S5/n-Si heterojunction were utilized to determine the barrier height (fb), diode ideality factor (n), and both series and shunt resistances. The C-V characteristic analysis shows that the prepared PbSb2S5/n-Si heterojunction is an abrupt junction. The power conversion efficiency of the prepared heterojunction has been calculated from the J-V characteristics under illuminations and was found to be 3.72%.

AB - lead antimony sulfide (PbSb2S5) thin films were successfully grown on an n-Si substrate by a thermal evaporation technique. The XRD spectrum clarifies the orthorhombic structure of the prepared PbSb2S5 thin films and the EDX analysis specifies that its composition is near stoichiometric. In the dark conditions, I-V characteristics of the PbSb2S5/n-Si heterojunction were utilized to determine the barrier height (fb), diode ideality factor (n), and both series and shunt resistances. The C-V characteristic analysis shows that the prepared PbSb2S5/n-Si heterojunction is an abrupt junction. The power conversion efficiency of the prepared heterojunction has been calculated from the J-V characteristics under illuminations and was found to be 3.72%.

KW - Heterojunction

KW - Lead antimony sulfide

KW - Photovoltaic

KW - Thermal evaporation technique

KW - XRD

UR - https://www.scopus.com/pages/publications/85050494647

U2 - 10.1088/2053-1591/aad15b

DO - 10.1088/2053-1591/aad15b

M3 - Article

AN - SCOPUS:85050494647

SN - 2053-1591

VL - 5

JO - Materials Research Express

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