Si1-x Gex structures fabricated by focused ion beam implantation

Th Ganetsos; D. Tsamakis; D. Panknin; G. L.R. Mair; J. Teichert; L. Bischoff; C. Aidinis

doi:10.1051/jp4:1998325

Si_1-x Ge_x structures fabricated by focused ion beam implantation

Th Ganetsos
, D. Tsamakis
, D. Panknin
, G. L.R. Mair
, J. Teichert
, L. Bischoff
, C. Aidinis

National and Kapodistrian University of Athens
National Technical University of Athens
Helmholtz-Zentrum Dresden-Rossendorf

Research output: Contribution to journal › Article › peer-review

Abstract

In this work we present a study of the spreading resistance for Si_1-xGe_x structures fabricated by F.I.B - L.M.I.S. technique . Maskless ion implantation using a Focused Ion Beam has the advantages of high resolution , the possibility to vary dose, energy and pattern design within a chip or within a structure.

Original language	English
Pages (from-to)	Pr3-109-Pr3-112
Journal	Journal De Physique. IV : JP
Volume	8
Issue number	3
DOIs	https://doi.org/10.1051/jp4:1998325
State	Published - 1998
Externally published	Yes

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10.1051/jp4:1998325

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@article{b891ddc9ad5b4b65915f9edb5c1c39aa,

title = "Si1-x Gex structures fabricated by focused ion beam implantation",

abstract = "In this work we present a study of the spreading resistance for Si1-xGex structures fabricated by F.I.B - L.M.I.S. technique . Maskless ion implantation using a Focused Ion Beam has the advantages of high resolution , the possibility to vary dose, energy and pattern design within a chip or within a structure.",

author = "Th Ganetsos and D. Tsamakis and D. Panknin and Mair, \{G. L.R.\} and J. Teichert and L. Bischoff and C. Aidinis",

year = "1998",

doi = "10.1051/jp4:1998325",

language = "English",

volume = "8",

pages = "Pr3--109--Pr3--112",

journal = "Journal De Physique. IV : JP",

issn = "1155-4339",

publisher = "EDP Sciences",

number = "3",

}

TY - JOUR

T1 - Si1-x Gex structures fabricated by focused ion beam implantation

AU - Ganetsos, Th

AU - Tsamakis, D.

AU - Panknin, D.

AU - Mair, G. L.R.

AU - Teichert, J.

AU - Bischoff, L.

AU - Aidinis, C.

PY - 1998

Y1 - 1998

N2 - In this work we present a study of the spreading resistance for Si1-xGex structures fabricated by F.I.B - L.M.I.S. technique . Maskless ion implantation using a Focused Ion Beam has the advantages of high resolution , the possibility to vary dose, energy and pattern design within a chip or within a structure.

AB - In this work we present a study of the spreading resistance for Si1-xGex structures fabricated by F.I.B - L.M.I.S. technique . Maskless ion implantation using a Focused Ion Beam has the advantages of high resolution , the possibility to vary dose, energy and pattern design within a chip or within a structure.

UR - https://www.scopus.com/pages/publications/11744352772

U2 - 10.1051/jp4:1998325

DO - 10.1051/jp4:1998325

M3 - Article

AN - SCOPUS:11744352772

SN - 1155-4339

VL - 8

SP - Pr3-109-Pr3-112

JO - Journal De Physique. IV : JP

JF - Journal De Physique. IV : JP

IS - 3

ER -

Si_1-x Ge_x structures fabricated by focused ion beam implantation

Abstract

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