Silicon-nanocrystal-based multiple-tunnel junction devices obtained by a combination of V-groove and ion beam synthesis techniques

Silicon-nanocrystal-based multiple-tunnel junction devices with non-linear source-drain current-voltage characteristics and with a source-drain electrode separation ranging from 50 to 200 nm were constructed. A combination of anisotropic wet and dry etching, optical lithography and low-energy Si ion implantation was used for their construction. Electrical characteristics were found to be strongly dependent on the source-drain separation and Si implantation dose.