Scaling of TG-FinFETs: 3-D Monte Carlo simulations in the ballistic and quasi-ballistic regimes

Ahmed T. Elthakeb; Hamdy Abd Elhamid; Yehea Ismail

doi:10.1109/TED.2015.2420580

Scaling of TG-FinFETs: 3-D Monte Carlo simulations in the ballistic and quasi-ballistic regimes

Ahmed T. Elthakeb
, Hamdy Abd Elhamid
, Yehea Ismail

American University in Cairo
Zewail City of Science and Technology

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Nanoscale trigate FinFET with channel lengths down to 9.7 nm as projected by the 2013 International Technology Roadmap of Semiconductors (ITRS-2013) are simulated by means of quantum corrected 3-D Monte Carlo technique in the ballistic and quasi-ballistic regimes. Ballisticity ratio (BR) is extracted and found to reach values as high as 90% at L_G=9.7 nm. The impact of the ITRS-2013 scaling strategy on the BR, and ON-/OFF-states is discussed. Forward and backward electron velocity components are extracted along the channel to analyze the electron transport in detail. Velocity profile is found to be characterized by two critical points along the channel, each is associated with a change in the electron acceleration showing the physical significance of the off-equilibrium transport with scaling the channel length.

Original language	English
Article number	7090982
Pages (from-to)	1796-1802
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	62
Issue number	6
DOIs	https://doi.org/10.1109/TED.2015.2420580
State	Published - 1 Jun 2015
Externally published	Yes

Keywords

3-D Monte Carlo (MC) technique
ballisticity ratio (BR)
forward/backward electron velocities
trigate (TG) FinFET.

Access to Document

10.1109/TED.2015.2420580

Cite this

@article{53727d2271ac49b1b51de3cae1d2d38f,

title = "Scaling of TG-FinFETs: 3-D Monte Carlo simulations in the ballistic and quasi-ballistic regimes",

abstract = "Nanoscale trigate FinFET with channel lengths down to 9.7 nm as projected by the 2013 International Technology Roadmap of Semiconductors (ITRS-2013) are simulated by means of quantum corrected 3-D Monte Carlo technique in the ballistic and quasi-ballistic regimes. Ballisticity ratio (BR) is extracted and found to reach values as high as 90\% at LG=9.7 nm. The impact of the ITRS-2013 scaling strategy on the BR, and ON-/OFF-states is discussed. Forward and backward electron velocity components are extracted along the channel to analyze the electron transport in detail. Velocity profile is found to be characterized by two critical points along the channel, each is associated with a change in the electron acceleration showing the physical significance of the off-equilibrium transport with scaling the channel length.",

keywords = "3-D Monte Carlo (MC) technique, ballisticity ratio (BR), forward/backward electron velocities, trigate (TG) FinFET.",

author = "Elthakeb, \{Ahmed T.\} and Elhamid, \{Hamdy Abd\} and Yehea Ismail",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

month = jun,

day = "1",

doi = "10.1109/TED.2015.2420580",

language = "English",

volume = "62",

pages = "1796--1802",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Scaling of TG-FinFETs

T2 - 3-D Monte Carlo simulations in the ballistic and quasi-ballistic regimes

AU - Elthakeb, Ahmed T.

AU - Elhamid, Hamdy Abd

AU - Ismail, Yehea

PY - 2015/6/1

Y1 - 2015/6/1

N2 - Nanoscale trigate FinFET with channel lengths down to 9.7 nm as projected by the 2013 International Technology Roadmap of Semiconductors (ITRS-2013) are simulated by means of quantum corrected 3-D Monte Carlo technique in the ballistic and quasi-ballistic regimes. Ballisticity ratio (BR) is extracted and found to reach values as high as 90% at LG=9.7 nm. The impact of the ITRS-2013 scaling strategy on the BR, and ON-/OFF-states is discussed. Forward and backward electron velocity components are extracted along the channel to analyze the electron transport in detail. Velocity profile is found to be characterized by two critical points along the channel, each is associated with a change in the electron acceleration showing the physical significance of the off-equilibrium transport with scaling the channel length.

AB - Nanoscale trigate FinFET with channel lengths down to 9.7 nm as projected by the 2013 International Technology Roadmap of Semiconductors (ITRS-2013) are simulated by means of quantum corrected 3-D Monte Carlo technique in the ballistic and quasi-ballistic regimes. Ballisticity ratio (BR) is extracted and found to reach values as high as 90% at LG=9.7 nm. The impact of the ITRS-2013 scaling strategy on the BR, and ON-/OFF-states is discussed. Forward and backward electron velocity components are extracted along the channel to analyze the electron transport in detail. Velocity profile is found to be characterized by two critical points along the channel, each is associated with a change in the electron acceleration showing the physical significance of the off-equilibrium transport with scaling the channel length.

KW - 3-D Monte Carlo (MC) technique

KW - ballisticity ratio (BR)

KW - forward/backward electron velocities

KW - trigate (TG) FinFET.

UR - https://www.scopus.com/pages/publications/85027940215

U2 - 10.1109/TED.2015.2420580

DO - 10.1109/TED.2015.2420580

M3 - Article

AN - SCOPUS:85027940215

SN - 0018-9383

VL - 62

SP - 1796

EP - 1802

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

M1 - 7090982

ER -

Scaling of TG-FinFETs: 3-D Monte Carlo simulations in the ballistic and quasi-ballistic regimes

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this