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Reduction of baseband electrical memory effects using broadband active baseband load-pull

  • Cardiff University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations

Abstract

This paper presents an enhanced active baseband load-pull capability that allows constant, frequency independent baseband load environments to be presented across wide modulation bandwidths. This capability is critical in allowing the effects of baseband impedance variation has on the performance of nonlinear microwave devices, when are driven by broadband multi-tone stimuli, to be fully investigated. The experimental investigations were carried out using a 10W GaN HEMT device, under 9-carrier complex multi-tone excitation.

Original languageEnglish
Title of host publication2013 IEEE International Wireless Symposium, IWS 2013
DOIs
StatePublished - 2013
Event2013 IEEE International Wireless Symposium, IWS 2013 - Beijing, China
Duration: 14 Apr 201318 Apr 2013

Publication series

Name2013 IEEE International Wireless Symposium, IWS 2013

Conference

Conference2013 IEEE International Wireless Symposium, IWS 2013
Country/TerritoryChina
CityBeijing
Period14/04/1318/04/13

Keywords

  • Active IF load-pull
  • baseband
  • broadband
  • memory effects
  • modulation
  • power amplifiers

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