Photovoltaic characterization of n-CdTe/p-CdMnTe/GaAs diluted magnetic diode

I. S. Yahia; F. Yakuphanoglu; S. Chusnutdinow; T. Wojtowicz; G. Karczewski

doi:10.1016/j.cap.2012.09.018

Photovoltaic characterization of n-CdTe/p-CdMnTe/GaAs diluted magnetic diode

I. S. Yahia
, F. Yakuphanoglu
, S. Chusnutdinow
, T. Wojtowicz
, G. Karczewski

Ain Shams University
King Khalid University
Firat University
Institute of Physics of the Polish Academy of Sciences

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

A CdTe/CdMnTe heterojunction magnetic diode for photovoltaic applications was fabricated by using molecular beam epitaxy (MBE). The ideality factor and the potential barrier height of the diode were determined to be 1.25 and 0.836 eV, respectively. Photovoltaic parameters of the studied device were determined at various illumination intensities. The highest open circuit voltage of the CdTe/CdMnTe heterostructure was equal to 0.56 V at the illumination intensity of 130 mW/cm². The reverse current of the n-CdTe/p-CdMnTe/GaAs diode increases with the increasing illumination intensities. The obtained results suggest that n-CdTe/p-CdMnTe/GaAs diode can be used as a photodiode in photovoltaic and photodetector applications.

Original language	English
Pages (from-to)	537-543
Number of pages	7
Journal	Current Applied Physics
Volume	13
Issue number	3
DOIs	https://doi.org/10.1016/j.cap.2012.09.018
State	Published - May 2013
Externally published	Yes

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SDG 7 Affordable and Clean Energy

Keywords

CdTe/CdMnTe
Current-voltage characterization under dark and illuminations
Photovoltaic effect
Photovoltaic parameters

Access to Document

10.1016/j.cap.2012.09.018

Cite this

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title = "Photovoltaic characterization of n-CdTe/p-CdMnTe/GaAs diluted magnetic diode",

abstract = "A CdTe/CdMnTe heterojunction magnetic diode for photovoltaic applications was fabricated by using molecular beam epitaxy (MBE). The ideality factor and the potential barrier height of the diode were determined to be 1.25 and 0.836 eV, respectively. Photovoltaic parameters of the studied device were determined at various illumination intensities. The highest open circuit voltage of the CdTe/CdMnTe heterostructure was equal to 0.56 V at the illumination intensity of 130 mW/cm2. The reverse current of the n-CdTe/p-CdMnTe/GaAs diode increases with the increasing illumination intensities. The obtained results suggest that n-CdTe/p-CdMnTe/GaAs diode can be used as a photodiode in photovoltaic and photodetector applications.",

keywords = "CdTe/CdMnTe, Current-voltage characterization under dark and illuminations, Photovoltaic effect, Photovoltaic parameters",

author = "Yahia, \{I. S.\} and F. Yakuphanoglu and S. Chusnutdinow and T. Wojtowicz and G. Karczewski",

year = "2013",

month = may,

doi = "10.1016/j.cap.2012.09.018",

language = "English",

volume = "13",

pages = "537--543",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

number = "3",

}

TY - JOUR

T1 - Photovoltaic characterization of n-CdTe/p-CdMnTe/GaAs diluted magnetic diode

AU - Yahia, I. S.

AU - Yakuphanoglu, F.

AU - Chusnutdinow, S.

AU - Wojtowicz, T.

AU - Karczewski, G.

PY - 2013/5

Y1 - 2013/5

N2 - A CdTe/CdMnTe heterojunction magnetic diode for photovoltaic applications was fabricated by using molecular beam epitaxy (MBE). The ideality factor and the potential barrier height of the diode were determined to be 1.25 and 0.836 eV, respectively. Photovoltaic parameters of the studied device were determined at various illumination intensities. The highest open circuit voltage of the CdTe/CdMnTe heterostructure was equal to 0.56 V at the illumination intensity of 130 mW/cm2. The reverse current of the n-CdTe/p-CdMnTe/GaAs diode increases with the increasing illumination intensities. The obtained results suggest that n-CdTe/p-CdMnTe/GaAs diode can be used as a photodiode in photovoltaic and photodetector applications.

AB - A CdTe/CdMnTe heterojunction magnetic diode for photovoltaic applications was fabricated by using molecular beam epitaxy (MBE). The ideality factor and the potential barrier height of the diode were determined to be 1.25 and 0.836 eV, respectively. Photovoltaic parameters of the studied device were determined at various illumination intensities. The highest open circuit voltage of the CdTe/CdMnTe heterostructure was equal to 0.56 V at the illumination intensity of 130 mW/cm2. The reverse current of the n-CdTe/p-CdMnTe/GaAs diode increases with the increasing illumination intensities. The obtained results suggest that n-CdTe/p-CdMnTe/GaAs diode can be used as a photodiode in photovoltaic and photodetector applications.

KW - CdTe/CdMnTe

KW - Current-voltage characterization under dark and illuminations

KW - Photovoltaic effect

KW - Photovoltaic parameters

UR - https://www.scopus.com/pages/publications/84871389539

U2 - 10.1016/j.cap.2012.09.018

DO - 10.1016/j.cap.2012.09.018

M3 - Article

AN - SCOPUS:84871389539

SN - 1567-1739

VL - 13

SP - 537

EP - 543

JO - Current Applied Physics

JF - Current Applied Physics

IS - 3

ER -

Photovoltaic characterization of n-CdTe/p-CdMnTe/GaAs diluted magnetic diode

Abstract

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Keywords

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