@inproceedings{25eb88e64da5495a957c996b8f505c94,
title = "Performance evaluation of finFET based SRAM under statistical VT variability",
abstract = "FinFET devices are the most promising solutions for further technology scaling in the long term projections of the ITRS. The performance of extremely scaled FinFET-based 256-bit (6T) SRAM is evaluated with technology scaling for channel lengths of 20nm down to 7nm showing the scaling trends of basic performance metrics. In addition, the impact of threshold voltage variations on the delay, power, and stability is reported considering die-to-die variations. Significant performance degradation is found starting from the 10nm channel length and continues down to 7nm.",
keywords = "6T SRAM, Nano-scale FinFET, Technology scaling, threshold voltage variations",
author = "El-Thakeb, \{Ahmed T.\} and Elhamid, \{Hamdy Abd\} and Hassan Mostafa and Yehea Ismail",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 26th International Conference on Microelectronics, ICM 2014 ; Conference date: 14-12-2014 Through 17-12-2014",
year = "2014",
doi = "10.1109/ICM.2014.7071813",
language = "English",
series = "Proceedings of the International Conference on Microelectronics, ICM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "88--91",
booktitle = "2014 26th International Conference on Microelectronics, ICM 2014",
address = "United States",
}