P-ZnTe/n-CdMnTe/n-GaAs diluted magnetic diode for photovoltaic applications

I. S. Yahia; G. B. Sakr; T. Wojtowicz; G. Karczewski

doi:10.1088/0268-1242/25/9/095001

P-ZnTe/n-CdMnTe/n-GaAs diluted magnetic diode for photovoltaic applications

I. S. Yahia
, G. B. Sakr
, T. Wojtowicz
, G. Karczewski

Ain Shams University
Institute of Physics of the Polish Academy of Sciences

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

A p-ZnTe/n-CdMnTe/n-GaAs diode was grown by MBE technology. The current-voltage characteristics of the grown device were analyzed under dark and illumination conditions. Thermionic emission and the space charge limited current were used to interpret the IV conduction mechanism through the heterostructure p-ZnTe/n-CdMnTe/n-GaAs at different temperatures. Photovoltaic parameters such as the short-circuit current I_sc and open-circuit voltage V_oc, power P = IV , maximum power P_max, maximum current I_M and maximum voltage V_M were calculated at different light intensities. The dynamic IV characteristics under illumination exhibit the photovoltaic behavior of the investigated sample. Photosensitivity and the responsivity of the prepared device were calculated at different illumination intensities. p-ZnTe/n-CdMnTe/n-GaAs is a new promising candidate for photovoltaic devices.

Original language	English
Article number	095001
Journal	Semiconductor Science and Technology
Volume	25
Issue number	9
DOIs	https://doi.org/10.1088/0268-1242/25/9/095001
State	Published - Sep 2010
Externally published	Yes

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SDG 7 Affordable and Clean Energy

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10.1088/0268-1242/25/9/095001

Cite this

@article{6410ab6572e14ac6b5825c88c701ffae,

title = "P-ZnTe/n-CdMnTe/n-GaAs diluted magnetic diode for photovoltaic applications",

abstract = "A p-ZnTe/n-CdMnTe/n-GaAs diode was grown by MBE technology. The current-voltage characteristics of the grown device were analyzed under dark and illumination conditions. Thermionic emission and the space charge limited current were used to interpret the IV conduction mechanism through the heterostructure p-ZnTe/n-CdMnTe/n-GaAs at different temperatures. Photovoltaic parameters such as the short-circuit current Isc and open-circuit voltage Voc, power P = IV , maximum power Pmax, maximum current IM and maximum voltage VM were calculated at different light intensities. The dynamic IV characteristics under illumination exhibit the photovoltaic behavior of the investigated sample. Photosensitivity and the responsivity of the prepared device were calculated at different illumination intensities. p-ZnTe/n-CdMnTe/n-GaAs is a new promising candidate for photovoltaic devices.",

author = "Yahia, \{I. S.\} and Sakr, \{G. B.\} and T. Wojtowicz and G. Karczewski",

year = "2010",

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doi = "10.1088/0268-1242/25/9/095001",

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TY - JOUR

T1 - P-ZnTe/n-CdMnTe/n-GaAs diluted magnetic diode for photovoltaic applications

AU - Yahia, I. S.

AU - Sakr, G. B.

AU - Wojtowicz, T.

AU - Karczewski, G.

PY - 2010/9

Y1 - 2010/9

N2 - A p-ZnTe/n-CdMnTe/n-GaAs diode was grown by MBE technology. The current-voltage characteristics of the grown device were analyzed under dark and illumination conditions. Thermionic emission and the space charge limited current were used to interpret the IV conduction mechanism through the heterostructure p-ZnTe/n-CdMnTe/n-GaAs at different temperatures. Photovoltaic parameters such as the short-circuit current Isc and open-circuit voltage Voc, power P = IV , maximum power Pmax, maximum current IM and maximum voltage VM were calculated at different light intensities. The dynamic IV characteristics under illumination exhibit the photovoltaic behavior of the investigated sample. Photosensitivity and the responsivity of the prepared device were calculated at different illumination intensities. p-ZnTe/n-CdMnTe/n-GaAs is a new promising candidate for photovoltaic devices.

AB - A p-ZnTe/n-CdMnTe/n-GaAs diode was grown by MBE technology. The current-voltage characteristics of the grown device were analyzed under dark and illumination conditions. Thermionic emission and the space charge limited current were used to interpret the IV conduction mechanism through the heterostructure p-ZnTe/n-CdMnTe/n-GaAs at different temperatures. Photovoltaic parameters such as the short-circuit current Isc and open-circuit voltage Voc, power P = IV , maximum power Pmax, maximum current IM and maximum voltage VM were calculated at different light intensities. The dynamic IV characteristics under illumination exhibit the photovoltaic behavior of the investigated sample. Photosensitivity and the responsivity of the prepared device were calculated at different illumination intensities. p-ZnTe/n-CdMnTe/n-GaAs is a new promising candidate for photovoltaic devices.

UR - https://www.scopus.com/pages/publications/78649372075

U2 - 10.1088/0268-1242/25/9/095001

DO - 10.1088/0268-1242/25/9/095001

M3 - Article

AN - SCOPUS:78649372075

SN - 0268-1242

VL - 25

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 9

M1 - 095001

ER -

P-ZnTe/n-CdMnTe/n-GaAs diluted magnetic diode for photovoltaic applications

Abstract

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