Novel design and microelectronic analysis of highly stable Au/Indigo/n-Si photodiode for optoelectronic applications

M. Aslam Manthrammel; I. S. Yahia; Mohd Shkir; S. AlFaify; H. Y. Zahran; V. Ganesh; F. Yakuphanoglu

doi:10.1016/j.solidstatesciences.2019.04.007

Novel design and microelectronic analysis of highly stable Au/Indigo/n-Si photodiode for optoelectronic applications

M. Aslam Manthrammel
, I. S. Yahia
, Mohd Shkir
, S. AlFaify
, H. Y. Zahran
, V. Ganesh
, F. Yakuphanoglu

King Khalid University
Ain Shams University
Firat University

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

In the current work, the authors studied a hybrid organic-inorganic photodiode combining n-type monocrystalline silicon (n-Si)and indigo dye where the natural dye indigo has been applied as an interfacial layer between Gold (Au)and n-Si. The electrical and photo-response characteristics of photodiode based on indigo dye were investigated through current, conductance and capacitance studies measured under the wide illumination intensity and frequency ranges. The frequency dependency of capacitance-voltage (C-V)and conductance-voltage (G-V)characteristic properties of the Au/Indigo/n-Si photodiode was examined in the frequencies varying from 100 kHz to 1 MHz in view of the effects of series resistance (R_s), the concentration of donor atoms (N_d)and density of interface states (Nss). The C-V and G -V studies indicate that the N_ss and R_s are key factors which are strongly influencing the electrical properties of the fabricated Photodiode. From the obtained results, the fabricated Au/Indigo/n-Si photodiode can be a promising contender for electro-optic device engineering.

Original language	English
Pages (from-to)	7-12
Number of pages	6
Journal	Solid State Sciences
Volume	93
DOIs	https://doi.org/10.1016/j.solidstatesciences.2019.04.007
State	Published - Jul 2019
Externally published	Yes

Keywords

Capacitance-voltage
Current-voltage analysis
Highly stable indigo dye
Organic photodiode
Series resistance and density of states

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10.1016/j.solidstatesciences.2019.04.007

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title = "Novel design and microelectronic analysis of highly stable Au/Indigo/n-Si photodiode for optoelectronic applications",

abstract = "In the current work, the authors studied a hybrid organic-inorganic photodiode combining n-type monocrystalline silicon (n-Si)and indigo dye where the natural dye indigo has been applied as an interfacial layer between Gold (Au)and n-Si. The electrical and photo-response characteristics of photodiode based on indigo dye were investigated through current, conductance and capacitance studies measured under the wide illumination intensity and frequency ranges. The frequency dependency of capacitance-voltage (C-V)and conductance-voltage (G-V)characteristic properties of the Au/Indigo/n-Si photodiode was examined in the frequencies varying from 100 kHz to 1 MHz in view of the effects of series resistance (Rs), the concentration of donor atoms (Nd)and density of interface states (Nss). The C-V and G -V studies indicate that the Nss and Rs are key factors which are strongly influencing the electrical properties of the fabricated Photodiode. From the obtained results, the fabricated Au/Indigo/n-Si photodiode can be a promising contender for electro-optic device engineering.",

keywords = "Capacitance-voltage, Current-voltage analysis, Highly stable indigo dye, Organic photodiode, Series resistance and density of states",

author = "Manthrammel, \{M. Aslam\} and Yahia, \{I. S.\} and Mohd Shkir and S. AlFaify and Zahran, \{H. Y.\} and V. Ganesh and F. Yakuphanoglu",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier Masson SAS",

year = "2019",

month = jul,

doi = "10.1016/j.solidstatesciences.2019.04.007",

language = "English",

volume = "93",

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T1 - Novel design and microelectronic analysis of highly stable Au/Indigo/n-Si photodiode for optoelectronic applications

AU - Manthrammel, M. Aslam

AU - Yahia, I. S.

AU - Shkir, Mohd

AU - AlFaify, S.

AU - Zahran, H. Y.

AU - Ganesh, V.

AU - Yakuphanoglu, F.

PY - 2019/7

Y1 - 2019/7

N2 - In the current work, the authors studied a hybrid organic-inorganic photodiode combining n-type monocrystalline silicon (n-Si)and indigo dye where the natural dye indigo has been applied as an interfacial layer between Gold (Au)and n-Si. The electrical and photo-response characteristics of photodiode based on indigo dye were investigated through current, conductance and capacitance studies measured under the wide illumination intensity and frequency ranges. The frequency dependency of capacitance-voltage (C-V)and conductance-voltage (G-V)characteristic properties of the Au/Indigo/n-Si photodiode was examined in the frequencies varying from 100 kHz to 1 MHz in view of the effects of series resistance (Rs), the concentration of donor atoms (Nd)and density of interface states (Nss). The C-V and G -V studies indicate that the Nss and Rs are key factors which are strongly influencing the electrical properties of the fabricated Photodiode. From the obtained results, the fabricated Au/Indigo/n-Si photodiode can be a promising contender for electro-optic device engineering.

AB - In the current work, the authors studied a hybrid organic-inorganic photodiode combining n-type monocrystalline silicon (n-Si)and indigo dye where the natural dye indigo has been applied as an interfacial layer between Gold (Au)and n-Si. The electrical and photo-response characteristics of photodiode based on indigo dye were investigated through current, conductance and capacitance studies measured under the wide illumination intensity and frequency ranges. The frequency dependency of capacitance-voltage (C-V)and conductance-voltage (G-V)characteristic properties of the Au/Indigo/n-Si photodiode was examined in the frequencies varying from 100 kHz to 1 MHz in view of the effects of series resistance (Rs), the concentration of donor atoms (Nd)and density of interface states (Nss). The C-V and G -V studies indicate that the Nss and Rs are key factors which are strongly influencing the electrical properties of the fabricated Photodiode. From the obtained results, the fabricated Au/Indigo/n-Si photodiode can be a promising contender for electro-optic device engineering.

KW - Capacitance-voltage

KW - Current-voltage analysis

KW - Highly stable indigo dye

KW - Organic photodiode

KW - Series resistance and density of states

UR - https://www.scopus.com/pages/publications/85065422485

U2 - 10.1016/j.solidstatesciences.2019.04.007

DO - 10.1016/j.solidstatesciences.2019.04.007

M3 - Article

AN - SCOPUS:85065422485

SN - 1293-2558

VL - 93

SP - 7

EP - 12

JO - Solid State Sciences

JF - Solid State Sciences

ER -

Novel design and microelectronic analysis of highly stable Au/Indigo/n-Si photodiode for optoelectronic applications

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Keywords

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