@inproceedings{e4d281168bc04cd4ac9da5a68170834d,
title = "Noise in SOI MOSFETs and gate-all around transistors",
abstract = "In this paper, we discuss the RF noise properties of SOI MOSFETs, and we present a suitable model for nanoscale fully-depleted SOI MOSFETs, which is derived from a compact quasi-static SOI MOSFET model by properly extending it to the high frequency regime, using the active line approach and taking into account all the extrinsic parameters. We have used a physically-based noise modeling which takes account diffusion related fluctuations; this allows to study fundamental noise parameters close to the current noise sources and to discuss the downscaling of these noise sources. Finally, we have extended our study to Double-Gate devices, using as a basis a quasi-static model recently presented.",
keywords = "Compact noise modeling, Double-Gate MOSFETs, High-frequency operation, SOI MOSFETs",
author = "B. I{\~n}iguez and A. L{\'a}zaro and Hamid, \{H. A.\} and G. Pailloncy and G. Dambrine and F. Danneville",
year = "2005",
month = aug,
day = "25",
doi = "10.1063/1.2036747",
language = "English",
isbn = "0735402671",
series = "AIP Conference Proceedings",
pages = "269--274",
booktitle = "NOISE AND FLUCTUATIONS",
note = "NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005 ; Conference date: 19-09-2005 Through 23-09-2005",
}