Negative differential resistance of new Sb2Te3/carbon as a new memory device diode

I. S. Yahia

Negative differential resistance of new Sb₂Te₃/carbon as a new memory device diode

I. S. Yahia

King Khalid University
Faculty of Education

Research output: Contribution to journal › Article › peer-review

Abstract

Thin films of Sb₂Te₃ were prepared using thermal evaporation technique on carbon as a new design memory device. X-ray pattern showed that Sb₂Te₃ is amorphous material with very small intensity peaks corresponding to Sb₂Te₃ phase. Both the device resistance and its current-voltage under different temperature were measured. The conduction activation energy δE_R was calculated from the temperature dependence of the device resistance. The static I-V characteristic curves of Sb₂Te₃/carbon diode showed a typical memory switching behavior. The mean values of threshold voltage V _th and the threshold electrical field E_th were decreased exponentially with increasing temperature. The value of switching activation energy ε was calculated. The obtained value of this ratio (ε/δE_R) equals to 2.046 supporting the thermal model for describing the switching mechanism inside Sb₂T₃/carbon memory diode. Sb₂T₃/carbon is a good candidate for a simple memory device.

Original language	English
Pages (from-to)	49-64
Number of pages	16
Journal	Far East Journal of Electronics and Communications
Volume	12
Issue number	1
State	Published - Mar 2014
Externally published	Yes

Keywords

Effect of temperature
Electrical activation energy
Memory device
Memory switching
Thermal model

Cite this

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title = "Negative differential resistance of new Sb2Te3/carbon as a new memory device diode",

abstract = "Thin films of Sb2Te3 were prepared using thermal evaporation technique on carbon as a new design memory device. X-ray pattern showed that Sb2Te3 is amorphous material with very small intensity peaks corresponding to Sb2Te3 phase. Both the device resistance and its current-voltage under different temperature were measured. The conduction activation energy δER was calculated from the temperature dependence of the device resistance. The static I-V characteristic curves of Sb2Te3/carbon diode showed a typical memory switching behavior. The mean values of threshold voltage V th and the threshold electrical field Eth were decreased exponentially with increasing temperature. The value of switching activation energy ε was calculated. The obtained value of this ratio (ε/δER) equals to 2.046 supporting the thermal model for describing the switching mechanism inside Sb2T3/carbon memory diode. Sb2T3/carbon is a good candidate for a simple memory device.",

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T1 - Negative differential resistance of new Sb2Te3/carbon as a new memory device diode

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N2 - Thin films of Sb2Te3 were prepared using thermal evaporation technique on carbon as a new design memory device. X-ray pattern showed that Sb2Te3 is amorphous material with very small intensity peaks corresponding to Sb2Te3 phase. Both the device resistance and its current-voltage under different temperature were measured. The conduction activation energy δER was calculated from the temperature dependence of the device resistance. The static I-V characteristic curves of Sb2Te3/carbon diode showed a typical memory switching behavior. The mean values of threshold voltage V th and the threshold electrical field Eth were decreased exponentially with increasing temperature. The value of switching activation energy ε was calculated. The obtained value of this ratio (ε/δER) equals to 2.046 supporting the thermal model for describing the switching mechanism inside Sb2T3/carbon memory diode. Sb2T3/carbon is a good candidate for a simple memory device.

AB - Thin films of Sb2Te3 were prepared using thermal evaporation technique on carbon as a new design memory device. X-ray pattern showed that Sb2Te3 is amorphous material with very small intensity peaks corresponding to Sb2Te3 phase. Both the device resistance and its current-voltage under different temperature were measured. The conduction activation energy δER was calculated from the temperature dependence of the device resistance. The static I-V characteristic curves of Sb2Te3/carbon diode showed a typical memory switching behavior. The mean values of threshold voltage V th and the threshold electrical field Eth were decreased exponentially with increasing temperature. The value of switching activation energy ε was calculated. The obtained value of this ratio (ε/δER) equals to 2.046 supporting the thermal model for describing the switching mechanism inside Sb2T3/carbon memory diode. Sb2T3/carbon is a good candidate for a simple memory device.

KW - Effect of temperature

KW - Electrical activation energy

KW - Memory device

KW - Memory switching

KW - Thermal model

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M3 - Article

AN - SCOPUS:84903784742

SN - 0973-7006

VL - 12

SP - 49

EP - 64

JO - Far East Journal of Electronics and Communications

JF - Far East Journal of Electronics and Communications

IS - 1

ER -

Negative differential resistance of new Sb₂Te₃/carbon as a new memory device diode

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Keywords

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