Nano-crystalline p-ZnGa2Te4/n-Si as a new heterojunction diode

G. B. Sakr; S. S. Fouad; I. S. Yahia; D. M. Abdel Basset; F. Yakuphanoglu

doi:10.1016/j.materresbull.2012.11.013

Nano-crystalline p-ZnGa₂Te₄/n-Si as a new heterojunction diode

G. B. Sakr
, S. S. Fouad
, I. S. Yahia
, D. M. Abdel Basset
, F. Yakuphanoglu

Ain Shams University
King Khalid University
Firat University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

In this communication, ZnGa₂Te₄ thin film was prepared by thermal evaporation technique on n-Si substrate. P-ZnGa ₂Te₄/n-Si heterojunction diode was fabricated. The structure of ZnGa₂Te₄ thin film was checked by XRD pattern and confirmed by AFM micrographs. The dark current-voltage characteristics of the heterojunction diode were investigated to determine the electrical parameters and conduction mechanism as a function of forward and reverse biasing conditions in the range (-10 V to 10 V) at temperature interval (303-423 K). The conduction mechanism was controlled by thermionic emission, space charge limited (SCLC) and trap-charge limited current (TCLC) mechanisms. The basic parameters such as the series resistance ^Rs, the shunt resistance R_sh, the ideality factor n and the barrier height ^φb of the diode, the total density of trap states N₀ and the exponential trapping distribution P_o were determined. The obtained results showed that ZnGa₂Te₄ is a good candidate for the applications of electronic devices.

Original language	English
Pages (from-to)	752-759
Number of pages	8
Journal	Materials Research Bulletin
Volume	48
Issue number	2
DOIs	https://doi.org/10.1016/j.materresbull.2012.11.013
State	Published - Feb 2013
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

A. Thin films
B. Vapor deposition
C. Atomic force microscopy
D. Electrical properties

Access to Document

10.1016/j.materresbull.2012.11.013

Cite this

@article{45016305339b482e877859089be02727,

title = "Nano-crystalline p-ZnGa2Te4/n-Si as a new heterojunction diode",

abstract = "In this communication, ZnGa2Te4 thin film was prepared by thermal evaporation technique on n-Si substrate. P-ZnGa 2Te4/n-Si heterojunction diode was fabricated. The structure of ZnGa2Te4 thin film was checked by XRD pattern and confirmed by AFM micrographs. The dark current-voltage characteristics of the heterojunction diode were investigated to determine the electrical parameters and conduction mechanism as a function of forward and reverse biasing conditions in the range (-10 V to 10 V) at temperature interval (303-423 K). The conduction mechanism was controlled by thermionic emission, space charge limited (SCLC) and trap-charge limited current (TCLC) mechanisms. The basic parameters such as the series resistance Rs, the shunt resistance Rsh, the ideality factor n and the barrier height φb of the diode, the total density of trap states N0 and the exponential trapping distribution Po were determined. The obtained results showed that ZnGa2Te4 is a good candidate for the applications of electronic devices.",

keywords = "A. Thin films, B. Vapor deposition, C. Atomic force microscopy, D. Electrical properties",

author = "Sakr, \{G. B.\} and Fouad, \{S. S.\} and Yahia, \{I. S.\} and \{Abdel Basset\}, \{D. M.\} and F. Yakuphanoglu",

year = "2013",

month = feb,

doi = "10.1016/j.materresbull.2012.11.013",

language = "English",

volume = "48",

pages = "752--759",

journal = "Materials Research Bulletin",

issn = "0025-5408",

publisher = "Elsevier Ltd",

number = "2",

}

TY - JOUR

T1 - Nano-crystalline p-ZnGa2Te4/n-Si as a new heterojunction diode

AU - Sakr, G. B.

AU - Fouad, S. S.

AU - Yahia, I. S.

AU - Abdel Basset, D. M.

AU - Yakuphanoglu, F.

PY - 2013/2

Y1 - 2013/2

N2 - In this communication, ZnGa2Te4 thin film was prepared by thermal evaporation technique on n-Si substrate. P-ZnGa 2Te4/n-Si heterojunction diode was fabricated. The structure of ZnGa2Te4 thin film was checked by XRD pattern and confirmed by AFM micrographs. The dark current-voltage characteristics of the heterojunction diode were investigated to determine the electrical parameters and conduction mechanism as a function of forward and reverse biasing conditions in the range (-10 V to 10 V) at temperature interval (303-423 K). The conduction mechanism was controlled by thermionic emission, space charge limited (SCLC) and trap-charge limited current (TCLC) mechanisms. The basic parameters such as the series resistance Rs, the shunt resistance Rsh, the ideality factor n and the barrier height φb of the diode, the total density of trap states N0 and the exponential trapping distribution Po were determined. The obtained results showed that ZnGa2Te4 is a good candidate for the applications of electronic devices.

AB - In this communication, ZnGa2Te4 thin film was prepared by thermal evaporation technique on n-Si substrate. P-ZnGa 2Te4/n-Si heterojunction diode was fabricated. The structure of ZnGa2Te4 thin film was checked by XRD pattern and confirmed by AFM micrographs. The dark current-voltage characteristics of the heterojunction diode were investigated to determine the electrical parameters and conduction mechanism as a function of forward and reverse biasing conditions in the range (-10 V to 10 V) at temperature interval (303-423 K). The conduction mechanism was controlled by thermionic emission, space charge limited (SCLC) and trap-charge limited current (TCLC) mechanisms. The basic parameters such as the series resistance Rs, the shunt resistance Rsh, the ideality factor n and the barrier height φb of the diode, the total density of trap states N0 and the exponential trapping distribution Po were determined. The obtained results showed that ZnGa2Te4 is a good candidate for the applications of electronic devices.

KW - A. Thin films

KW - B. Vapor deposition

KW - C. Atomic force microscopy

KW - D. Electrical properties

UR - https://www.scopus.com/pages/publications/84871714406

U2 - 10.1016/j.materresbull.2012.11.013

DO - 10.1016/j.materresbull.2012.11.013

M3 - Article

AN - SCOPUS:84871714406

SN - 0025-5408

VL - 48

SP - 752

EP - 759

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 2

ER -