Liquid metal ion source-produced germanium ions for maskless ion implantation

Th Ganetsos; C. Aidinis; L. Bischoff; G. L.R. Mair; J. Teichert; D. Panknin; I. Papadopoulos

doi:10.1088/0022-3727/34/3/102

Liquid metal ion source-produced germanium ions for maskless ion implantation

Th Ganetsos
, C. Aidinis
, L. Bischoff
, G. L.R. Mair
, J. Teichert
, D. Panknin
, I. Papadopoulos

National and Kapodistrian University of Athens
Helmholtz-Zentrum Dresden-Rossendorf

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report on a preliminary investigation on the maskless implantation of Ge ions into Si for the production of Si_1-xGe_x microstructures. The technique employs a focused ion beam system using a liquid metal alloy ion source. Closely spaced simple structures down to about 1 μm in width, with well-defined boundaries, have been produced. On some of these structures, spreading resistance measurements were carried out.

Original language	English
Pages (from-to)	L11-L13
Journal	Journal of Physics D: Applied Physics
Volume	34
Issue number	3
DOIs	https://doi.org/10.1088/0022-3727/34/3/102
State	Published - 7 Feb 2001
Externally published	Yes

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10.1088/0022-3727/34/3/102

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abstract = "We report on a preliminary investigation on the maskless implantation of Ge ions into Si for the production of Si1-xGex microstructures. The technique employs a focused ion beam system using a liquid metal alloy ion source. Closely spaced simple structures down to about 1 μm in width, with well-defined boundaries, have been produced. On some of these structures, spreading resistance measurements were carried out.",

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AU - Ganetsos, Th

AU - Aidinis, C.

AU - Bischoff, L.

AU - Mair, G. L.R.

AU - Teichert, J.

AU - Panknin, D.

AU - Papadopoulos, I.

PY - 2001/2/7

Y1 - 2001/2/7

N2 - We report on a preliminary investigation on the maskless implantation of Ge ions into Si for the production of Si1-xGex microstructures. The technique employs a focused ion beam system using a liquid metal alloy ion source. Closely spaced simple structures down to about 1 μm in width, with well-defined boundaries, have been produced. On some of these structures, spreading resistance measurements were carried out.

AB - We report on a preliminary investigation on the maskless implantation of Ge ions into Si for the production of Si1-xGex microstructures. The technique employs a focused ion beam system using a liquid metal alloy ion source. Closely spaced simple structures down to about 1 μm in width, with well-defined boundaries, have been produced. On some of these structures, spreading resistance measurements were carried out.

UR - https://www.scopus.com/pages/publications/0034825296

U2 - 10.1088/0022-3727/34/3/102

DO - 10.1088/0022-3727/34/3/102

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SP - L11-L13

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JF - Journal of Physics D: Applied Physics

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ER -

Liquid metal ion source-produced germanium ions for maskless ion implantation

Abstract

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