@inproceedings{2cdf8bbb9c9a4de48dfe73d08eb44bb1,
title = "Investigation of baseband electrical memory effects on the dynamic characteristics of power transistors",
abstract = "The inter-modulation distortion products vary in amplitude and asymmetry due to the effects of baseband and 2nd harmonic impedance. This paper presents an investigation into the relationship between the IMD asymmetries caused by baseband impedance variations and looping or hysteresis that can sometimes appear in the dynamic transfer characteristics of microwave power devices when subjected to modulated excitation. Here, the investigations are carried out on 2W GaN HFET bare die device characterized at 2.1GHz, and using IF active load-pull to quantify the role of baseband impedances on observed hysteresis in the dynamic transfer characteristics. Analysis is performed in envelope domain in order to more effectively reveal the DDT's sensitivity to electrical baseband memory effects.",
keywords = "Envelope domain, GaN, Hysteresis, IF active load-pull, Inter-modulation, Memory Effects",
author = "Chaudhary, \{Muhammad Akmal\} and Memon, \{Zulifqar Ali\} and Jonathon Lees and Johannes Benedikt and Paul Tasker",
year = "2013",
doi = "10.1109/INMIC.2013.6731333",
language = "English",
isbn = "9781479930432",
series = "2013 16th International Multi Topic Conference, INMIC 2013",
publisher = "IEEE Computer Society",
pages = "106--109",
booktitle = "2013 16th International Multi Topic Conference, INMIC 2013",
address = "United States",
note = "2013 16th International Multi Topic Conference, INMIC 2013 ; Conference date: 19-12-2013 Through 20-12-2013",
}