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Investigation and analysis into device optimization for attaining efficiencies in-excess of 90% when accounting for higher harmonics

  • A. L. Clarke
  • , M. Akmal
  • , J. Lees
  • , P. J. Tasker
  • , J. Benedikt
  • Cardiff University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

14 Scopus citations

Abstract

A rigorous, systematic, measurement-founded approach is presented that enables the design of highly efficient power amplifiers. The identified process allows the designer to quickly identify the parameters necessary for completion of a design whilst ascertaining their flexibility and impact on performance degradation. The investigation continues to consider the impact of the higher harmonics and gate bias as design tools on the performance of the design and proposes a strategy that utilizes their positive effect as well as considering the subsequent impact on device scaling. This was carried out on GaAs pHEMT devices from commercial processes that obtained measured peak effiIcnideenxc ieTse romf 9s 0.1 % at PtdB in a class-B bias.

Original languageEnglish
Title of host publication2010 IEEE MTT-S International Microwave Symposium, MTT 2010
Pages1114-1117
Number of pages4
DOIs
StatePublished - 2010
Externally publishedYes
Event2010 IEEE MTT-S International Microwave Symposium, MTT 2010 - Anaheim, CA, United States
Duration: 23 May 201028 May 2010

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2010 IEEE MTT-S International Microwave Symposium, MTT 2010
Country/TerritoryUnited States
CityAnaheim, CA
Period23/05/1028/05/10

Keywords

  • Class-F
  • Inverse class-F
  • Load-pull
  • Microwave measurements
  • Power amplifiers

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