Influence of Illumination on the Electrical Properties of p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs Heterojunction Grown by Molecular Beam Epitaxy (MBE)

I. Jum’h; M. S. Abd El-Sadek; H. Al-Taani; I. S. Yahia; G. Karczewski

doi:10.1007/s11664-016-5071-7

Influence of Illumination on the Electrical Properties of p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs Heterojunction Grown by Molecular Beam Epitaxy (MBE)

I. Jum’h
, M. S. Abd El-Sadek
, H. Al-Taani
, I. S. Yahia
, G. Karczewski

German Jordanian University
South Valley University
Ain Shams University
King Khalid University
Institute of Physics of the Polish Academy of Sciences

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Heterostructure p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs was evaporated using molecular beam epitaxy and investigated for photovoltaic energy conversion application. The electrical properties of the studied heterostructure were measured and characterized in order to understand the relevant electrical transport mechanisms. Electrical properties derived from the current–voltage (I–V) characteristics of solar cells provide essential information necessary for the analysis of performance losses and device efficiency. I–V characteristics are investigated in dark conditions and under different light intensities. All the electrical and power parameters of the heterostructure were measured, calculated and explained.

Original language	English
Pages (from-to)	1061-1066
Number of pages	6
Journal	Journal of Electronic Materials
Volume	46
Issue number	2
DOIs	https://doi.org/10.1007/s11664-016-5071-7
State	Published - 1 Feb 2017
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

current–voltage
dark and illumination conditions
device sensitivity
heterostructure diode
p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs
photovoltaic parameters

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10.1007/s11664-016-5071-7

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title = "Influence of Illumination on the Electrical Properties of p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs Heterojunction Grown by Molecular Beam Epitaxy (MBE)",

abstract = "Heterostructure p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs was evaporated using molecular beam epitaxy and investigated for photovoltaic energy conversion application. The electrical properties of the studied heterostructure were measured and characterized in order to understand the relevant electrical transport mechanisms. Electrical properties derived from the current–voltage (I–V) characteristics of solar cells provide essential information necessary for the analysis of performance losses and device efficiency. I–V characteristics are investigated in dark conditions and under different light intensities. All the electrical and power parameters of the heterostructure were measured, calculated and explained.",

keywords = "current–voltage, dark and illumination conditions, device sensitivity, heterostructure diode, p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs, photovoltaic parameters",

author = "I. Jum{\textquoteright}h and \{Abd El-Sadek\}, \{M. S.\} and H. Al-Taani and Yahia, \{I. S.\} and G. Karczewski",

note = "Publisher Copyright: {\textcopyright} 2016, The Minerals, Metals \& Materials Society.",

year = "2017",

month = feb,

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doi = "10.1007/s11664-016-5071-7",

language = "English",

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T1 - Influence of Illumination on the Electrical Properties of p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs Heterojunction Grown by Molecular Beam Epitaxy (MBE)

AU - Jum’h, I.

AU - Abd El-Sadek, M. S.

AU - Al-Taani, H.

AU - Yahia, I. S.

AU - Karczewski, G.

PY - 2017/2/1

Y1 - 2017/2/1

N2 - Heterostructure p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs was evaporated using molecular beam epitaxy and investigated for photovoltaic energy conversion application. The electrical properties of the studied heterostructure were measured and characterized in order to understand the relevant electrical transport mechanisms. Electrical properties derived from the current–voltage (I–V) characteristics of solar cells provide essential information necessary for the analysis of performance losses and device efficiency. I–V characteristics are investigated in dark conditions and under different light intensities. All the electrical and power parameters of the heterostructure were measured, calculated and explained.

AB - Heterostructure p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs was evaporated using molecular beam epitaxy and investigated for photovoltaic energy conversion application. The electrical properties of the studied heterostructure were measured and characterized in order to understand the relevant electrical transport mechanisms. Electrical properties derived from the current–voltage (I–V) characteristics of solar cells provide essential information necessary for the analysis of performance losses and device efficiency. I–V characteristics are investigated in dark conditions and under different light intensities. All the electrical and power parameters of the heterostructure were measured, calculated and explained.

KW - current–voltage

KW - dark and illumination conditions

KW - device sensitivity

KW - heterostructure diode

KW - p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs

KW - photovoltaic parameters

UR - https://www.scopus.com/pages/publications/84994171849

U2 - 10.1007/s11664-016-5071-7

DO - 10.1007/s11664-016-5071-7

M3 - Article

AN - SCOPUS:84994171849

SN - 0361-5235

VL - 46

SP - 1061

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 2

ER -

Influence of Illumination on the Electrical Properties of p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs Heterojunction Grown by Molecular Beam Epitaxy (MBE)

Abstract

UN SDGs

Keywords

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