Influence of frequency and applied voltage on electrical characterization of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs grown by molecular beam epitaxy

A. A.M. Farag; I. S. Yahia; R. Jafer; Javed Iqbal; H. Y. Zahran; S. Chusnutdinow; T. Wojtowicz; G. Karczewski; A. M. El-Naggar

doi:10.1016/j.matchemphys.2017.06.061

Influence of frequency and applied voltage on electrical characterization of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs grown by molecular beam epitaxy

A. A.M. Farag
, I. S. Yahia
, R. Jafer
, Javed Iqbal
, H. Y. Zahran
, S. Chusnutdinow
, T. Wojtowicz
, G. Karczewski
, A. M. El-Naggar

Al Jouf University
Ain Shams University
King Khalid University
Faculty of Sciences, King Abdulaziz University
King Abdulaziz University
Institute of Physics of the Polish Academy of Sciences
King Saud University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A specialized heterojunction of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs for varicap and high response signal diode applications was epitaxially grown by using molecular beam epitaxy. Frequency dependence of the capacitance-voltage, conductance-voltage and series -resistance characteristics in the frequency spectrum from 10 kHz to 10 MHz at ambient temperature was investigated. An increase in the capacitance is observed especially at lower frequency range that can be attributed to the predominant effect of interface states. A negative capacitance is observed and is explained on the basis of the loss of interface charges or interface states localized between metal and semiconductor due to impact ionization process. The frequency and voltage dependencies of the series resistance were investigated and characteristic peaks were observed for the voltage dependence of series resistance under low-frequency range. Some important parameters such as barrier height, carrier concentration, cut off voltage were also estimated and discussed. The electrical characteristics of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs show a good candidacy for electronic and optoelectronic devices.

Original language	English
Pages (from-to)	354-361
Number of pages	8
Journal	Materials Chemistry and Physics
Volume	201
DOIs	https://doi.org/10.1016/j.matchemphys.2017.06.061
State	Published - 1 Nov 2017
Externally published	Yes

Keywords

C-V
Frequencies analysis
G-V
Impedance spectroscopy
Negative capacitance
Rs-V
p-ZnTe:N /CdTe:Mg/n-CdTe:I/GaAs

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10.1016/j.matchemphys.2017.06.061

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Farag, A. A. M., Yahia, I. S., Jafer, R., Iqbal, J., Zahran, H. Y., Chusnutdinow, S., Wojtowicz, T., Karczewski, G., & El-Naggar, A. M. (2017). Influence of frequency and applied voltage on electrical characterization of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs grown by molecular beam epitaxy. Materials Chemistry and Physics, 201, 354-361. https://doi.org/10.1016/j.matchemphys.2017.06.061

@article{37e45f5546cb419da29cd1f321e9a47d,

title = "Influence of frequency and applied voltage on electrical characterization of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs grown by molecular beam epitaxy",

abstract = "A specialized heterojunction of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs for varicap and high response signal diode applications was epitaxially grown by using molecular beam epitaxy. Frequency dependence of the capacitance-voltage, conductance-voltage and series -resistance characteristics in the frequency spectrum from 10 kHz to 10 MHz at ambient temperature was investigated. An increase in the capacitance is observed especially at lower frequency range that can be attributed to the predominant effect of interface states. A negative capacitance is observed and is explained on the basis of the loss of interface charges or interface states localized between metal and semiconductor due to impact ionization process. The frequency and voltage dependencies of the series resistance were investigated and characteristic peaks were observed for the voltage dependence of series resistance under low-frequency range. Some important parameters such as barrier height, carrier concentration, cut off voltage were also estimated and discussed. The electrical characteristics of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs show a good candidacy for electronic and optoelectronic devices.",

keywords = "C-V, Frequencies analysis, G-V, Impedance spectroscopy, Negative capacitance, Rs-V, p-ZnTe:N /CdTe:Mg/n-CdTe:I/GaAs",

author = "Farag, \{A. A.M.\} and Yahia, \{I. S.\} and R. Jafer and Javed Iqbal and Zahran, \{H. Y.\} and S. Chusnutdinow and T. Wojtowicz and G. Karczewski and El-Naggar, \{A. M.\}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

month = nov,

day = "1",

doi = "10.1016/j.matchemphys.2017.06.061",

language = "English",

volume = "201",

pages = "354--361",

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Farag, AAM, Yahia, IS, Jafer, R, Iqbal, J, Zahran, HY, Chusnutdinow, S, Wojtowicz, T, Karczewski, G & El-Naggar, AM 2017, 'Influence of frequency and applied voltage on electrical characterization of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs grown by molecular beam epitaxy', Materials Chemistry and Physics, vol. 201, pp. 354-361. https://doi.org/10.1016/j.matchemphys.2017.06.061

TY - JOUR

T1 - Influence of frequency and applied voltage on electrical characterization of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs grown by molecular beam epitaxy

AU - Farag, A. A.M.

AU - Yahia, I. S.

AU - Jafer, R.

AU - Iqbal, Javed

AU - Zahran, H. Y.

AU - Chusnutdinow, S.

AU - Wojtowicz, T.

AU - Karczewski, G.

AU - El-Naggar, A. M.

PY - 2017/11/1

Y1 - 2017/11/1

N2 - A specialized heterojunction of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs for varicap and high response signal diode applications was epitaxially grown by using molecular beam epitaxy. Frequency dependence of the capacitance-voltage, conductance-voltage and series -resistance characteristics in the frequency spectrum from 10 kHz to 10 MHz at ambient temperature was investigated. An increase in the capacitance is observed especially at lower frequency range that can be attributed to the predominant effect of interface states. A negative capacitance is observed and is explained on the basis of the loss of interface charges or interface states localized between metal and semiconductor due to impact ionization process. The frequency and voltage dependencies of the series resistance were investigated and characteristic peaks were observed for the voltage dependence of series resistance under low-frequency range. Some important parameters such as barrier height, carrier concentration, cut off voltage were also estimated and discussed. The electrical characteristics of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs show a good candidacy for electronic and optoelectronic devices.

AB - A specialized heterojunction of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs for varicap and high response signal diode applications was epitaxially grown by using molecular beam epitaxy. Frequency dependence of the capacitance-voltage, conductance-voltage and series -resistance characteristics in the frequency spectrum from 10 kHz to 10 MHz at ambient temperature was investigated. An increase in the capacitance is observed especially at lower frequency range that can be attributed to the predominant effect of interface states. A negative capacitance is observed and is explained on the basis of the loss of interface charges or interface states localized between metal and semiconductor due to impact ionization process. The frequency and voltage dependencies of the series resistance were investigated and characteristic peaks were observed for the voltage dependence of series resistance under low-frequency range. Some important parameters such as barrier height, carrier concentration, cut off voltage were also estimated and discussed. The electrical characteristics of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs show a good candidacy for electronic and optoelectronic devices.

KW - C-V

KW - Frequencies analysis

KW - G-V

KW - Impedance spectroscopy

KW - Negative capacitance

KW - Rs-V

KW - p-ZnTe:N /CdTe:Mg/n-CdTe:I/GaAs

UR - https://www.scopus.com/pages/publications/85029397641

U2 - 10.1016/j.matchemphys.2017.06.061

DO - 10.1016/j.matchemphys.2017.06.061

M3 - Article

AN - SCOPUS:85029397641

SN - 0254-0584

VL - 201

SP - 354

EP - 361

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

ER -

Influence of frequency and applied voltage on electrical characterization of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs grown by molecular beam epitaxy

Abstract

Keywords

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