TY - JOUR
T1 - Highly Robust Double Memristive Device Based on Perovskite/Molybdenum Oxide-Sulfide Compound Heterojunction System
AU - Kalemai, Gion
AU - Verykios, Apostolos
AU - Chatzigiannakis, Georgios
AU - Tsipas, Polychronis
AU - Dimoulas, Athanasios
AU - Psycharis, Vassilis
AU - Sakellis, Elias
AU - Boukos, Nikos
AU - Likodimos, Vlassis
AU - Karatasios, Ioannis
AU - Kourtis, Michael Alexandros
AU - Aidinis, Konstantinos
AU - Chroneos, Alexander
AU - Yusoff, Abd Rashid bin Mohd
AU - Argitis, Panagiotis
AU - Davazoglou, Dimitris
AU - Vasilopoulou, Maria
AU - Soultati, Anastasia
N1 - Publisher Copyright:
© 2025 The Author(s). Advanced Electronic Materials published by Wiley-VCH GmbH.
PY - 2025/4
Y1 - 2025/4
N2 - Halide organic–inorganic perovskites (HOIPs) are a promising class of materials for neuromorphic computing and processing systems demonstrating a variety of resistive switching (RS) mechanisms. HOIPs have been used as active layers in two- and three-terminal synaptic devices reporting high performance in metrics of speed and energy consumption. Nevertheless, halide perovskites suffer from poor ambient stability and reproducibility. In this work, a highly robust double memristor based on two active layers forming a stacking heterojunction is demonstrated. In particular, the functional layer consists of a molybdenum oxide-molybdenum sulfide compound (MoO3-MoS2) and a quadruple cation perovskite (RbCsMAFA) deposited on top showing favorable band alignment for the specific application. The double memristor based on the MoO3-MoS2/RbCsMAFA heterojunction exhibits impressive and stable resistive switching behavior with endurance of 100 cycles, high retention of 2 × 104 s, high environmental stability maintaining its memristive behavior for 1 month, and excellent artificial synaptic functions. The robust device also exhibits good thermal stability maintaining the memristive characteristics at 85 °C, as well as good photonic memristive behavior with an improved ON/OFF ratio under constant illumination. Here it is proven that the proposed double memristor is a promising candidate for artificial synapses and neuromorphic computing systems.
AB - Halide organic–inorganic perovskites (HOIPs) are a promising class of materials for neuromorphic computing and processing systems demonstrating a variety of resistive switching (RS) mechanisms. HOIPs have been used as active layers in two- and three-terminal synaptic devices reporting high performance in metrics of speed and energy consumption. Nevertheless, halide perovskites suffer from poor ambient stability and reproducibility. In this work, a highly robust double memristor based on two active layers forming a stacking heterojunction is demonstrated. In particular, the functional layer consists of a molybdenum oxide-molybdenum sulfide compound (MoO3-MoS2) and a quadruple cation perovskite (RbCsMAFA) deposited on top showing favorable band alignment for the specific application. The double memristor based on the MoO3-MoS2/RbCsMAFA heterojunction exhibits impressive and stable resistive switching behavior with endurance of 100 cycles, high retention of 2 × 104 s, high environmental stability maintaining its memristive behavior for 1 month, and excellent artificial synaptic functions. The robust device also exhibits good thermal stability maintaining the memristive characteristics at 85 °C, as well as good photonic memristive behavior with an improved ON/OFF ratio under constant illumination. Here it is proven that the proposed double memristor is a promising candidate for artificial synapses and neuromorphic computing systems.
KW - molybdenum disulfide
KW - molybdenum oxide
KW - neuromorphic computing
KW - perovskite memristor
KW - stability
UR - https://www.scopus.com/pages/publications/105003239283
U2 - 10.1002/aelm.202400433
DO - 10.1002/aelm.202400433
M3 - Article
AN - SCOPUS:105003239283
SN - 2199-160X
VL - 11
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 5
M1 - 2400433
ER -