Gel formation theory approach for the modelling of negative chemically amplified e-beam resists

G. Patsis; I. Raptis; N. Glezos; P. Argitis; M. Hatzakis; C. J. Aidinis; M. Gentili; R. Maggiora

doi:10.1016/S0167-9317(96)00178-5

Gel formation theory approach for the modelling of negative chemically amplified e-beam resists

G. Patsis
, I. Raptis
, N. Glezos
, P. Argitis
, M. Hatzakis
, C. J. Aidinis
, M. Gentili
, R. Maggiora

Demokritos National Centre for Scientific Research
National and Kapodistrian University of Athens
National Research Council of Italy

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Gel formation theory is applied for the interpretation of experimental lithographic results of epoxy based negative e-beam resists. The success of different theoretical models in fitting experiments depends upon the value of concentration of the photoacid generator (PAG) and the thermal processing conditions. The chemical composition of each specific system, the sensitivity and the range of acid diffusion are important parameters in the analysis. It is concluded that existing theories with an appropriate interpretation explain satisfactorily experimental results in a given range of resist composition and processing parameters. However in some cases a model which would include more explicitly the reaction-diffusion mechanism is required.

Original language	English
Pages (from-to)	157-160
Number of pages	4
Journal	Microelectronic Engineering
Volume	35
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(96)00178-5
State	Published - Feb 1997
Externally published	Yes

Access to Document

10.1016/S0167-9317(96)00178-5

Cite this

@article{7f45cdaf4fac47f883696d0bda2b0637,

title = "Gel formation theory approach for the modelling of negative chemically amplified e-beam resists",

abstract = "Gel formation theory is applied for the interpretation of experimental lithographic results of epoxy based negative e-beam resists. The success of different theoretical models in fitting experiments depends upon the value of concentration of the photoacid generator (PAG) and the thermal processing conditions. The chemical composition of each specific system, the sensitivity and the range of acid diffusion are important parameters in the analysis. It is concluded that existing theories with an appropriate interpretation explain satisfactorily experimental results in a given range of resist composition and processing parameters. However in some cases a model which would include more explicitly the reaction-diffusion mechanism is required.",

author = "G. Patsis and I. Raptis and N. Glezos and P. Argitis and M. Hatzakis and Aidinis, \{C. J.\} and M. Gentili and R. Maggiora",

year = "1997",

month = feb,

doi = "10.1016/S0167-9317(96)00178-5",

language = "English",

volume = "35",

pages = "157--160",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Gel formation theory approach for the modelling of negative chemically amplified e-beam resists

AU - Patsis, G.

AU - Raptis, I.

AU - Glezos, N.

AU - Argitis, P.

AU - Hatzakis, M.

AU - Aidinis, C. J.

AU - Gentili, M.

AU - Maggiora, R.

PY - 1997/2

Y1 - 1997/2

N2 - Gel formation theory is applied for the interpretation of experimental lithographic results of epoxy based negative e-beam resists. The success of different theoretical models in fitting experiments depends upon the value of concentration of the photoacid generator (PAG) and the thermal processing conditions. The chemical composition of each specific system, the sensitivity and the range of acid diffusion are important parameters in the analysis. It is concluded that existing theories with an appropriate interpretation explain satisfactorily experimental results in a given range of resist composition and processing parameters. However in some cases a model which would include more explicitly the reaction-diffusion mechanism is required.

AB - Gel formation theory is applied for the interpretation of experimental lithographic results of epoxy based negative e-beam resists. The success of different theoretical models in fitting experiments depends upon the value of concentration of the photoacid generator (PAG) and the thermal processing conditions. The chemical composition of each specific system, the sensitivity and the range of acid diffusion are important parameters in the analysis. It is concluded that existing theories with an appropriate interpretation explain satisfactorily experimental results in a given range of resist composition and processing parameters. However in some cases a model which would include more explicitly the reaction-diffusion mechanism is required.

UR - https://www.scopus.com/pages/publications/0031074688

U2 - 10.1016/S0167-9317(96)00178-5

DO - 10.1016/S0167-9317(96)00178-5

M3 - Article

AN - SCOPUS:0031074688

SN - 0167-9317

VL - 35

SP - 157

EP - 160

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

Gel formation theory approach for the modelling of negative chemically amplified e-beam resists

Abstract

Access to Document

Other files and links

Fingerprint

Cite this