Gamma-ray attenuation, fast neutron removal cross-section and build up factor of Cu₂MnGe[S, Se, Te]₄ semiconductor compounds: Novel approach

This study is original work on semiconductor materials for gamma-ray detectors and fast neutron removal cross-section. This work is focused on the investigating of γ-ray interactions using Cu₂MnGeS₄, Cu₂MnGeSe₄, and Cu₂MnGeTe₄ semiconductor compounds. The photon interaction parameters (MAC, LAC, HVL, TVL, MEF, ACS, ECS, Z_eff, N_eff, C_eff, Z_eq, EBF, and EABF) of the three different semiconductor compounds were graphically presented within 0.015–15 MeV energy range. A useful comparison with regular radiation shielding with standard glass materials with these samples has been developed. Cu₂MnGeSe₄ and Cu₂MnGeTe₄ semiconductor compounds have higher values of MAC and LAC compared with ordinary and steel magnetite concrete at the 0.1, 10, and 15 MeV. Interestingly, the checked semiconductor samples named Cu₂MnGeSe₄ andCu₂MnGeTe₄ have lower values for HVL and MFP than some commercial glasses used in radiation safety applications. At 15 KeV, Z_eff values are 27.13, 32.11 and 39.21 and N_eff values are 3.41, 2.71 and 2.47 × 10²³ electron cm⁻³ for Cu₂MnGeS₄, Cu₂MnGeSe₄, and Cu₂MnGeTe₄ semiconductor compounds, respectively. Semiconductor compounds have better neutron protection features compared to RS-520, RS-253-G18, and RS-360 standard glassy materials. In a large energy range, the third sample, Cu₂MnGeTe₄, showed high sensing for gamma-rays and neutrons. These studies are very important for the manufacture of detectors for semiconductors used for X and gamma-ray measurements (detection of radiation).