Fabrication of Si nanodevices by optical lithography and anisotropic etching

D. Tsoukalas; P. Normand; C. Aidinis; E. Kapetanakis; P. Argitis

doi:10.1016/S0167-9317(98)00122-1

Fabrication of Si nanodevices by optical lithography and anisotropic etching

D. Tsoukalas
, P. Normand
, C. Aidinis
, E. Kapetanakis
, P. Argitis

Demokritos National Centre for Scientific Research
National and Kapodistrian University of Athens

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

This paper investigates the fabrication of V-shaped grooves of submicron dimensions in Silicon-On-Insulator (SOI) material by anisotropic wet etching. Such structures are examined in the context of the fabrication of a Single-Electron-Transistor which as we demonstrate can be formed in SOI by means and at resolutions afforded by optical lithography.

Original language	English
Pages (from-to)	523-526
Number of pages	4
Journal	Microelectronic Engineering
Volume	41-42
DOIs	https://doi.org/10.1016/S0167-9317(98)00122-1
State	Published - 1998
Externally published	Yes

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SDG 9 Industry, Innovation, and Infrastructure

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10.1016/S0167-9317(98)00122-1

Cite this

@article{fcb3f0b3d263499b839f3f102927d7b7,

title = "Fabrication of Si nanodevices by optical lithography and anisotropic etching",

abstract = "This paper investigates the fabrication of V-shaped grooves of submicron dimensions in Silicon-On-Insulator (SOI) material by anisotropic wet etching. Such structures are examined in the context of the fabrication of a Single-Electron-Transistor which as we demonstrate can be formed in SOI by means and at resolutions afforded by optical lithography.",

author = "D. Tsoukalas and P. Normand and C. Aidinis and E. Kapetanakis and P. Argitis",

year = "1998",

doi = "10.1016/S0167-9317(98)00122-1",

language = "English",

volume = "41-42",

pages = "523--526",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Fabrication of Si nanodevices by optical lithography and anisotropic etching

AU - Tsoukalas, D.

AU - Normand, P.

AU - Aidinis, C.

AU - Kapetanakis, E.

AU - Argitis, P.

PY - 1998

Y1 - 1998

N2 - This paper investigates the fabrication of V-shaped grooves of submicron dimensions in Silicon-On-Insulator (SOI) material by anisotropic wet etching. Such structures are examined in the context of the fabrication of a Single-Electron-Transistor which as we demonstrate can be formed in SOI by means and at resolutions afforded by optical lithography.

AB - This paper investigates the fabrication of V-shaped grooves of submicron dimensions in Silicon-On-Insulator (SOI) material by anisotropic wet etching. Such structures are examined in the context of the fabrication of a Single-Electron-Transistor which as we demonstrate can be formed in SOI by means and at resolutions afforded by optical lithography.

UR - https://www.scopus.com/pages/publications/0031678274

U2 - 10.1016/S0167-9317(98)00122-1

DO - 10.1016/S0167-9317(98)00122-1

M3 - Article

AN - SCOPUS:0031678274

SN - 0167-9317

VL - 41-42

SP - 523

EP - 526

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Fabrication of Si nanodevices by optical lithography and anisotropic etching

Abstract

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