Fabrication of Si nano-wires using anisotropic dry and wet etching

P. Normand; D. Tsoukalas; C. Aidinis; A. Tserepi; D. Kouvatsos; E. Kapetanakis

doi:10.1016/S0167-9317(98)00129-4

Fabrication of Si nano-wires using anisotropic dry and wet etching

P. Normand
, D. Tsoukalas
, C. Aidinis
, A. Tserepi
, D. Kouvatsos
, E. Kapetanakis

Demokritos National Centre for Scientific Research
National and Kapodistrian University of Athens

Research output: Contribution to journal › Article › peer-review

Abstract

A new process for the fabrication of silicon wires on SOI material using anisotropic dry and wet etching is proposed. Arrays of silicon pads joined by narrow Si wires have been successfully fabricated. The structures are uniform and precisely controlled, thus demonstrating the reliability of the process and its suitability for nanodevice applications.

Original language	English
Pages (from-to)	551-554
Number of pages	4
Journal	Microelectronic Engineering
Volume	41-42
DOIs	https://doi.org/10.1016/S0167-9317(98)00129-4
State	Published - 1998
Externally published	Yes

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@article{890cf88224414e43bf50821f53826d18,

title = "Fabrication of Si nano-wires using anisotropic dry and wet etching",

abstract = "A new process for the fabrication of silicon wires on SOI material using anisotropic dry and wet etching is proposed. Arrays of silicon pads joined by narrow Si wires have been successfully fabricated. The structures are uniform and precisely controlled, thus demonstrating the reliability of the process and its suitability for nanodevice applications.",

author = "P. Normand and D. Tsoukalas and C. Aidinis and A. Tserepi and D. Kouvatsos and E. Kapetanakis",

year = "1998",

doi = "10.1016/S0167-9317(98)00129-4",

language = "English",

volume = "41-42",

pages = "551--554",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Fabrication of Si nano-wires using anisotropic dry and wet etching

AU - Normand, P.

AU - Tsoukalas, D.

AU - Aidinis, C.

AU - Tserepi, A.

AU - Kouvatsos, D.

AU - Kapetanakis, E.

PY - 1998

Y1 - 1998

N2 - A new process for the fabrication of silicon wires on SOI material using anisotropic dry and wet etching is proposed. Arrays of silicon pads joined by narrow Si wires have been successfully fabricated. The structures are uniform and precisely controlled, thus demonstrating the reliability of the process and its suitability for nanodevice applications.

AB - A new process for the fabrication of silicon wires on SOI material using anisotropic dry and wet etching is proposed. Arrays of silicon pads joined by narrow Si wires have been successfully fabricated. The structures are uniform and precisely controlled, thus demonstrating the reliability of the process and its suitability for nanodevice applications.

UR - https://www.scopus.com/pages/publications/12844273054

U2 - 10.1016/S0167-9317(98)00129-4

DO - 10.1016/S0167-9317(98)00129-4

M3 - Article

AN - SCOPUS:12844273054

SN - 0167-9317

VL - 41-42

SP - 551

EP - 554

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Fabrication of Si nano-wires using anisotropic dry and wet etching

Abstract

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