Fabrication and electrical characterization of the InSbS3/n-Si heterojunction

I. M. El Radaf; M. S. Al-Kotb; Mahmoud Nasr; I. S. Yahia

doi:10.1016/j.jallcom.2019.02.189

Fabrication and electrical characterization of the InSbS₃/n-Si heterojunction

I. M. El Radaf
, M. S. Al-Kotb
, Mahmoud Nasr
, I. S. Yahia

National Research Center
Ain Shams University
King Khalid University

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

In this article, polycrystalline InSbS₃ thin films were fabricated successfully at first time on the n-Si wafer by spray pyrolysis system to produce InSbS₃/n-Si heterojunction. The structural characterization of the InSbS₃ thin films was measured by FE-SEM and XRD techniques. The InSbS₃ thin films are polycrystalline with orthorhombic structure. The diode parameters of the InSbS₃/n-Si heterojunction like the barrier height (ϕ_b), series resistance (R_s) and the ideality factor (n) were evaluated by measuring the I–V characteristic curve in the dark situations. The C–V analysis of the InSbS₃/n-Si heterojunction illustrates the junction was abrupt. The efficiency of the InSbS₃/n-Si device were evaluated from the J-V characteristics curve under illuminations and equal 3.82%

Original language	English
Pages (from-to)	206-211
Number of pages	6
Journal	Journal of Alloys and Compounds
Volume	788
DOIs	https://doi.org/10.1016/j.jallcom.2019.02.189
State	Published - 5 Jun 2019
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Heterojunction
Indium antimony sulfide
I–V and C–V characteristics
Photovoltaic
Spray pyrolysis technique
XRD/FE-SEM

Access to Document

10.1016/j.jallcom.2019.02.189

Cite this

@article{8a06cdf03b524d6b9e8ba2214019e747,

title = "Fabrication and electrical characterization of the InSbS3/n-Si heterojunction",

abstract = "In this article, polycrystalline InSbS3 thin films were fabricated successfully at first time on the n-Si wafer by spray pyrolysis system to produce InSbS3/n-Si heterojunction. The structural characterization of the InSbS3 thin films was measured by FE-SEM and XRD techniques. The InSbS3 thin films are polycrystalline with orthorhombic structure. The diode parameters of the InSbS3/n-Si heterojunction like the barrier height (ϕb), series resistance (Rs) and the ideality factor (n) were evaluated by measuring the I–V characteristic curve in the dark situations. The C–V analysis of the InSbS3/n-Si heterojunction illustrates the junction was abrupt. The efficiency of the InSbS3/n-Si device were evaluated from the J-V characteristics curve under illuminations and equal 3.82\%",

keywords = "Heterojunction, Indium antimony sulfide, I–V and C–V characteristics, Photovoltaic, Spray pyrolysis technique, XRD/FE-SEM",

author = "\{El Radaf\}, \{I. M.\} and Al-Kotb, \{M. S.\} and Mahmoud Nasr and Yahia, \{I. S.\}",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = jun,

day = "5",

doi = "10.1016/j.jallcom.2019.02.189",

language = "English",

volume = "788",

pages = "206--211",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Fabrication and electrical characterization of the InSbS3/n-Si heterojunction

AU - El Radaf, I. M.

AU - Al-Kotb, M. S.

AU - Nasr, Mahmoud

AU - Yahia, I. S.

PY - 2019/6/5

Y1 - 2019/6/5

N2 - In this article, polycrystalline InSbS3 thin films were fabricated successfully at first time on the n-Si wafer by spray pyrolysis system to produce InSbS3/n-Si heterojunction. The structural characterization of the InSbS3 thin films was measured by FE-SEM and XRD techniques. The InSbS3 thin films are polycrystalline with orthorhombic structure. The diode parameters of the InSbS3/n-Si heterojunction like the barrier height (ϕb), series resistance (Rs) and the ideality factor (n) were evaluated by measuring the I–V characteristic curve in the dark situations. The C–V analysis of the InSbS3/n-Si heterojunction illustrates the junction was abrupt. The efficiency of the InSbS3/n-Si device were evaluated from the J-V characteristics curve under illuminations and equal 3.82%

AB - In this article, polycrystalline InSbS3 thin films were fabricated successfully at first time on the n-Si wafer by spray pyrolysis system to produce InSbS3/n-Si heterojunction. The structural characterization of the InSbS3 thin films was measured by FE-SEM and XRD techniques. The InSbS3 thin films are polycrystalline with orthorhombic structure. The diode parameters of the InSbS3/n-Si heterojunction like the barrier height (ϕb), series resistance (Rs) and the ideality factor (n) were evaluated by measuring the I–V characteristic curve in the dark situations. The C–V analysis of the InSbS3/n-Si heterojunction illustrates the junction was abrupt. The efficiency of the InSbS3/n-Si device were evaluated from the J-V characteristics curve under illuminations and equal 3.82%

KW - Heterojunction

KW - Indium antimony sulfide

KW - I–V and C–V characteristics

KW - Photovoltaic

KW - Spray pyrolysis technique

KW - XRD/FE-SEM

UR - https://www.scopus.com/pages/publications/85061851511

U2 - 10.1016/j.jallcom.2019.02.189

DO - 10.1016/j.jallcom.2019.02.189

M3 - Article

AN - SCOPUS:85061851511

SN - 0925-8388

VL - 788

SP - 206

EP - 211

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -